Allicdata Part #: | FQD1N60CTF-ND |
Manufacturer Part#: |
FQD1N60CTF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 1A DPAK |
More Detail: | N-Channel 600V 1A (Tc) 2.5W (Ta), 28W (Tc) Surface... |
DataSheet: | FQD1N60CTF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 28W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 170pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 6.2nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 11.5 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FQD1N60CTF is a field effect transistor (FET), specifically a MOSFET (metal oxide semiconductor FET). It is a single-junction device, meaning it consists of a single semiconductor layer between two metal contacts. It is one of the most commonly used FETs in modern electronic circuit designs due to its low switching power and extremely fast switching rate.
The FQD1N60CTF is a N-channel enhancement-mode device, meaning it is activated when a potential (voltage or current) is applied to the gate. When no potential is applied to the gate, the device is "off." When a positive potential is applied, the electrons in the channel are attracted to the gate, creating a conductive path between the source and drain terminals. This allows current to flow, thus turning the device "on" and allowing power to be transferred from the source to the drain.
The FQD1N60CTF has a number of applications in power electronics, particularly in switching circuits. It is commonly used in power supply designs and for controlling motors. Due to its fast switching rate and low power requirements, it is also used in high-power amplifiers, switching power supplies, and voltage regulators. Additionally, it is used in data conversion systems and for driving high-power LEDs.
The FQD1N60CTF is typically operated in two states: linear and switching. In linear mode, the device is activated by applying a constant, relatively small voltage to the gate. This causes a relatively small current to flow through the channel, which is used to control the device\'s output voltage and current. In switching mode, the device is activated by applying a higher voltage to the gate. This creates a conductive channel between the source and drain, which allows current to rapidly flow, thus "switching" the device on and off.
In addition to its power electronics applications, the FQD1N60CTF is also used in digital logic circuitry and for logic level shifting. In logic circuits, a high voltage is applied to the gate to activate the device and a low voltage to deactivate it. This is used to build simple logic gates and other basic digital circuitry. Logic level shifting is used to convert a signal from one voltage level to another, such as from 5V to 3.3V. The FQD1N60CTF can be used to rapidly switch between these voltages, allowing for fast data conversion.
The FQD1N60CTF is an excellent choice for a wide variety of power electronics and digital logic applications. Its fast switching rate and low power requirements make it well-suited for these tasks, and it offers excellent reliability and performance. With appropriate design, it can provide robust and reliable power switching solutions for a variety of designs.
The specific data is subject to PDF, and the above content is for reference
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