FQD19N10TM_F080

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FQD19N10TM_F080 is a N-Channel Enhancement Mode MOSFET made with a high-cell density trench process technology which has superior RDS(on) value, easy-to-use technology, and excellent cost-performance ratios. It is an ideal device for applications that require high-voltage, high-current, and low power dissipation in a small footprint.

This device is a single-gate MOSFET, capable of operating up to 10A continuous current and 80V drain-source voltage in a package that is only 4mm x 4mm. It has a low Ron (maximum 0.28 Ohm) and low Coss(capacitance) of only 17pF. The gate is protected against electrostatic discharge with an ESD protection circuit that covers the entire package.

The FQD19N10TM_F080 has a wide variety of application fields. It is used in high-efficiency designs such as DC-DC converters, switching power supplies, and motor speed controls. It is also used in high-speed, high-precision logic gate switches and general-purpose current routing as well as in low-noise analog and digital switches. Because of its high-speed switching capability, it is used in high-temperature chip carriers, Multi-Chip modules, flat panel displays, and other high-density applications.

The working principle of the FQD19N10TM_F080 is based on the electrostatic force between the gate and the channel. When a voltage is applied to the gate, an electrostatic field is created that causes electrons in the semiconductor to move from one side of the semiconductor to the other side. This generates an electrical current between the source and drain. Consequently, the FQD19N10TM_F080 acts as an electronic ‘gate’, controlling the flow of current between the source and drain.

The FQD19N10TM_F080 can also be used to build advanced “smart” circuits that can sense changes in the environment and adjust their operations accordingly. The device is designed to operate at very low voltages, allowing for ultra-low-power operation. It is also designed to be energy efficient and easy to use, even in high-volume applications.

The FQD19N10TM_F080 is a versatile and reliable MOSFET that can be used for a wide variety of applications. Its wide range of performance characteristics and small size give it an edge over competing devices and make it a good choice for a variety of applications. Its high cell density makes it suitable for high-performance power circuits, and its small size, low power consumption, and easy-to-use design make it an attractive option for a range of applications.

The specific data is subject to PDF, and the above content is for reference