Allicdata Part #: | FQD13N10LTM_NBEL001-ND |
Manufacturer Part#: |
FQD13N10LTM_NBEL001 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 10A DPAK |
More Detail: | N-Channel 100V 10A (Tc) 2.5W (Ta), 40W (Tc) Surfac... |
DataSheet: | FQD13N10LTM_NBEL001 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | QFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 520pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 40W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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FQD13N10LTM_NBEL001 is an N-channel, Depletion-mode, Vertical DMOS Transistor with fast switching. It is manufactured by Fairchild Semiconductor, a global leader in design, manufacture, and supply of innovative technologies for the semiconductor industry. The transistor is designed to provide high-frequency performance and low on-resistance for optimal switching speed.
The FQD13N10LTM_NBEL001 is commonly used in power management applications, such as DC-DC converters, as well as in communication systems. It combines ultra-low on-resistance with low gate charge and minimal gate-to-drain capacitance, making it a suitable choice for high-frequency applications.
The application field for FQD13N10LTM_NBEL001 includes audio amplifiers, motor control, pulse control, logic level shifting and LED switching. Its vertical DMOS structure allows it to offer consistent low on-resistance over a wide temperature range.
The working principle of FQD13N10LTM_NBEL001 is based on the same principles that dictate how any other transistor behaves. Its operation involves two key components—the source and the drain. When a voltage is applied to the source, it causes a current to flow from the source to the drain. This current is controlled by the amount of voltage applied to the gate. For FQD13N10LTM_NBEL001, the typical on-resistance is approximately 10 ohms. The transistor is designed to dissipate a maximum of 25W and has a maximum channel temperature of 150°C.
FQD13N10LTM_NBEL001 can be used as an amplifier, switch, or cascode amplifier. When used as an amplifier, it is typically operated in the linear mode, meaning that the output is proportional to the input. When used as a switch, the output is controlled by the voltage applied to the gate, allowing it to be turned on or off. Finally, when used as a cascode amplifier, the FQD13N10LTM_NBEL001 can be used to create a voltage gain stage.
In addition to the linear and switching modes, FQD13N10LTM_NBEL001 is also able to be configured in an buck, boost, forward, or flyback mode. When used as a buck converter, the application requires two N-channel FQD13N10LTM_NBEL001 devices in series and two P-channel devices in parallel. When configured as a boost converter, only one N-channel device is needed.
Overall, FQD13N10LTM_NBEL001 is an N-channel Depletion-mode Vertical DMOS Transistor designed for high-speed applications, such as power management and communication systems. Its fast switching speed and low on-resistance make it suitable for use in a wide range of applications, including audio amplifiers, motor control, logic level shifting and LED switching. It can be used in a variety of different modes, such as as a linear amplifier, switch, buck/boost converter, or cascode amplifier.
The specific data is subject to PDF, and the above content is for reference
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