FQD1N50TM

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FQD1N50TM application field and working principle

FQD1N50TM is a type of Field Effect Transistor (FET) MOSFETs. The FQD1N50TM is the latest in a range of single MOSFETs designed and manufactured by Fairchild Semiconductor, a leading provider of power solutions. This device is designed to provide superior performance and extended power range in single applications. It is ideal for a variety of commercial, industrial, and automotive applications ranging from lighting controllers, digital audio systems, motor drives, and power supplies.

The FQD1N50TM has a surface-mount power hybrid design and is the perfect choice for applications that require low R_{DS (on)} and low insertion losses. Its unique channel design ensures high efficiency and long operating life. Compared to other single FETs, FQD1N50TM brings superior performance at a reduced cost.

Working Principle

The FQD1N50TM is a linear, single-channel MOSFET with a N-type channel. When the gate voltage is higher than the threshold voltage, the channel opens and the drain current, I_D, can flow towards the source. The gate-source voltage, V_GS, controls the drain current.

In a linear mode, the FQD1N50TM operates with a low on-state resistance, R_{DS (on)}, and exhibits excellent switching characteristics and low gate charge. In this mode, V_GS increases linearly until the drain current reaches a maximum, when the drain voltage, V_DS, is saturated. The maximum drain current is limited by the power dissipation, P_D, which is fixed at a certain value.

The device is rated for −55°C to +150°C operation. Junction-to-ambient thermal impedance and maximum power dissipation have both been optimized to ensure reliable, efficient operation even in the harshest environments.

Applications

FQD1N50TM is suitable for a wide range of applications. This MOSFET is generally used for voltage-fed applications such as DC/DC converters, motor control applications, and TV set-top box applications. It is also widely used in negative voltage applications, such as high-side drives, brushless DC motor controllers, and AC-DC lighting. Its low junction-to-ambient thermal impedance and reduced power losses mean that it is an ideal choice for temperature critical applications.

The FQD1N50TM is also suitable for general power switching applications, including audio amplifiers and Class-D audio systems, TV inverter circuits, and power supplies. This MOSFET delivers exceptional performance and power efficiency, allowing it to also be used in high-frequency RF communication and other high-speed switching applications.

Conclusion

FQD1N50TM is a highly efficient, low on-state resistance MOSFET. It offers excellent power efficiency and reliable performance in a wide range of applications. This device is well-suited for applications that require low junction-to-ambient thermal impedance, such as DC/DC converters, motor control applications, and RF communication systems. The FQD1N50TM is an ideal choice for those looking for an economical solution for their power management needs.

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