FQD12N20LTM_SN00173

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The FQD12N20LTM_SN00173 is a type of field effect transistor (FET) belonging to the category of single metal oxide semiconductor field effect transistors (MOSFET). This device is used in many different areas, offering advantages that single transistors can provide over more traditional bipolar transistors. It offers extremely low on-state resistance with very low gate drive requirements.

The basic principle of FET operation is one of electrical modulation of an aqueous solution. That same electrical modulation is used to essentially switch on and off an electric current. A transistor is a three-terminal device, consisting of a source, gate, and drain. A voltage applied to the gate will induce a current (drain-source current) to flow through the channel. This current is usually proportional to the gate voltage and is known as the channel current.

In the FQD12N20LTM_SN00173, the gate is composed of metal oxide. Heated electrons are attracted to the metal oxide and form a channel that is dependent upon the voltage and current applied. Because metal oxide is an insulator, no current can pass through the gate and the channel must remain open until the gate voltage is removed. This process allows FETs to quickly switch currents on and off and can happen repeatedly without damage.

The FQD12N20LTM_SN00173 has a drain current rating of 25A, a peak drain current of up to 40 Amperes, and a breakdown voltage of 150 Volts. It\'s internal gate voltage is 12V, making it suitable for use in voltages up to 24V and higher. The FQD12N20LTM_SN00173 is also popular for its low gate drive requirements, making it a great choice when switching high currents with only a few volts. Typical applications include power conversion and Motor Drivers, switching power supplies, and power amplifiers.

One of the unique advantages of the FQD12N20LTM_SN00173 is its high frequency capability. This allows it to switch large amounts of current in a fraction of the time, making it useful in applications such as switching regulators and power converters. This capability also allows the device to be used in high speed logic circuits, allowing faster data transfer than a standard transistor. This makes it a popular choice for switching digital signals.

The FQD12N20LTM_SN00173 is a popular device for interfacing high voltage circuits with low voltage components. Its low on-state resistance and high speed switching capability make it a perfect choice for controlling high power applications. By controlling the gate voltage, the FQD12N20LTM_SN00173 allows for precise control of large current and voltage levels, making it an ideal choice for many industrial and consumer applications.

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