FQD12N20TM_F080

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FQD12N20TM_F080 is a N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by Fairchild Semiconductor. It is a single-package, two-terminal MOSFET with continuously adjustable RDS (On-state Resistance) for improved power management. The FQD12N20TM_F080 is suitable for use in various applications where fast switching performance and low power dissipation are desired.

Application Field

The FQD12N20TM_F080 is commonly used in low-side power switching applications, such as main power supplies, DC-DC converters, and AC-DC controllers. It is widely used in power management systems, such as microprocessors and ASICs (Application Specific Integrated Circuits) that require a low level of on-state resistance and high switching speeds. Moreover, this MOSFET can operate at high switching frequencies, which makes it ideal for high-efficiency, low-noise, high-power applications.

Working Principle

MOSFETs work on the principle of voltage control. These devices are controlled by a gate voltage, VGS. As the gate voltage is increased, more electric current is allowed to flow from the source to the drain. The gate barrier voltage is the voltage at which the device starts to conduct current. When the drain voltage, VDS is less than the gate barrier voltage, the device is in the OFF state.

The FQD12N20TM_F080 also has an adjustable RDS (On-state) resistance. This means that the on-state resistance can be adjusted to optimize the power management in the application. When the gate voltage is increased, the on-state resistance decreases and the device can handle more current.

In conclusion, the FQD12N20TM_F080 is a single-package, two-terminal n-channel MOSFET which is suitable for use in various low-side power switching applications. It is capable of operating at high switching frequencies and with adjustable RDS, making it ideal for high-efficiency, low-noise, high-power applications.

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