FQD13N10LTF

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FQD13N10LTF is a n-channel MOSFET device with a very low on-resistance of just 10 mΩ. It is used in a variety of applications such as motor control, power supplies, DC-DC converters and motor drivers. FQD13N10LTF is a discrete power MOSFET with a maximum current rating of 20A and a maximum driving voltage of 200V. FQD13N10LTF is a single MOSFET device with low on-resistance, high speed switching capability and low input capacitance.

The FQD13N10LTF works by using a substrate with an insulated gate electrode as the source. The gate is separated from the source and creates an electrical barrier between the two points. When a voltage is applied to the gate, electrons are created within the gate and the barrier is lowered allowing current to flow between the source and the drain. This is known as the depletion region where the voltage applied to the gate controls the current flow. The FQD13N10LTF is a normally-off device meaning that when there is no voltage applied to the gate, no electrical connection is made between the source and drain. The FQD13N10LTF also has an extremely low on-resistance of just 10 mΩ that enables efficient and cost-effective power conversion solutions.

FQD13N10LTF is mainly used for motor speed control in applications such as motor drives, inverters, and positioning systems. It can also be used for motor braking applications. It is also used for power supply and DC-DC converter applications. Additionally, FQD13N10LTF is often used for gate drive circuitry in RF power amplifiers.

Conclusion: FQD13N10LTF is single n-channel MOSFET device with a low on-resistance of just 10 mΩ. It is mainly used for motor speed control and other power conversion solutions. Its extremely low on-resistance enables high efficiency and cost-effective solutions.

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