FQD17P06TF Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 44W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	900pF @ 25V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	27nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	135 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	12A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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<h2>Introduction</h2>The FQD17P06TF is a series of semiconductor devices for controlling current flow. Its field of application is wide, making it a highly sought-after product in the market. In this article, we will discuss the application field and working principle of the FQD17P06TF.<h2>Applications</h2>The FQD17P06TF is basically a Field-effect transistor (FET), specifically a metal-oxide-semiconductor FET (MOSFET). As a single FET, its application includes switching and amplifying signals that are low level. It is capable of supplying power directly to a load and controlling the current flow through it. It is also frequently used as an active resistive element for better energy efficiency. Due to its small size and low drain-source ON resistance, the FQD17P06TF is a favourite choice for applications requiring a low-cost, high-efficiency switch. Common applications include mobile devices and computers, power supplies, motor speed control, solenoid and servo control, pulse-width modulation, and power factor correction.<h2>Working Principle</h2>The FQD17P06TF is a voltage-controlled FET, meaning that its drain current is controlled by the voltage applied between the gate and source terminals. The current-voltage characteristic of the device is characterized by a relatively small drain-source ON resistance when the gate voltage is high, and a very large OFF state drain-source resistance when the gate voltage is low.When the gate voltage is increased, the MOSFET will enter the triode mode. This is because the electric field created by the gate voltage induces a potential difference between the drain and source terminals, allowing current to flow from one to the other. The FQD17P06TF is symmetrical in its operation, which means the same device can handle both the sourcing and the sinking of current. This is an advantage for applications that require bidirectional operation.When operating in saturation mode, the drain current has a linear relationship to the gate voltage, making it an ideal device for applications requiring a low-cost, low-loss amplifying switch.<h2>Conclusion</h2>The FQD17P06TF is a single, field-effect transistor that is used for a wide range of applications. Its low drain-source ON resistance and small size make it ideal for a variety of switches and amplifiers. Its bidirectional operation also allows it to be used in applications that require two-way communication. In summary, the FQD17P06TF is a highly sought-after device due to its wide range of applications and great efficiency.

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