Allicdata Part #: | FQD12P10TF-ND |
Manufacturer Part#: |
FQD12P10TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 100V 9.4A DPAK |
More Detail: | P-Channel 100V 9.4A (Tc) 2.5W (Ta), 50W (Tc) Surfa... |
DataSheet: | FQD12P10TF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 800pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 290 mOhm @ 4.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.4A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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When it comes to transistors, the F*** (Field-Effect Transistor) is one of the most popular types due to its versatility, its low cost and its fairly easy operation. The FQD12P10TF is a specific type of FET (Field Effect Transistor), and within this category, it is a single MOSFET (Metal Oxide Semiconductor FET).
The FQD12P10TF is a transistor based on silicon N-Channel MOSFET technology. It is a compact and low cost FET which is quite easy to integrate into a circuit as it has a package with as few as 10 pins. It can operate at a maximum junction temperature of 175 °C (the temperature at which reverse leakage current will begin to increase). This makes the FQD12P10TF particularly suitable for use in high temperature environments.
The FQD12P10TF can be used for a wide range of applications, such as switching motor circuits, protecting vulnerable electronics from damage due to overload caused by accidental overloads or short circuits, powering HVAC equipment, and controlling lighting and appliances. Additionally, because of its low resistance, the FQD12P10TF can also be used in high-speed switching applications as well as in digital circuits.
The FQD12P10TF is a four-terminal voltage-controlled device that works on the principle of controlling the current between its source and drain. It is based on the MOS capacitor structure, where the gate is the capacitor’s control electrode. The transistor works as a voltage-controlled variable resistor, where the resistance between the source and drain is determined by the voltage applied to the gate. The drain and source carry the current, while the gate voltage controls the current.
The FQD12P10TF features low on-state resistance and low capacitance, making it particularly suitable for high-frequency switching applications. It has a continuous drain current rating of 12 amperes (A) and a peak pulse current rating of 30 A, as well as a gate-source voltage rating of ±20 volts (V). It also has a very low power consumption and low drain-source on-resistance.
In summary, the FQD12P10TF is a popular, relatively low-cost, and easy-to-use transistor device that is well suited for a number of applications, including switching motor circuits and controlling lighting and appliances, as well as for use in high-speed switching and digital circuits. Its low resistance and low capacitance also make it an ideal choice for high-frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
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