FQD19N10TF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FQD19N10TF is a member of the FET family of transistors, or field effect transistors (FETs). It is a single type of MOSFET (metal-oxide-semiconductor field-effect transistor) and is a type of voltage-controlled electronic switch. It is designed to operate as an electronic switch with digital signals, providing high switching speeds, low noise and high efficiency.

FQD19N10TF has a number of applications in various electronic devices such as power converters, motor controllers, and industrial equipment. It is often used in motor speed control and motor control applications, particularly in battery-powered devices. It is also used to control high-power devices such as electric appliances and power supply systems.

The FQD19N10TF is an n-channel MOSFET with an internal drain-to-source junction (IDSS) rating of 10V and an output impedance of 2 ohms. The drain-to-source breakdown voltage (BVDSS) is 19V and the gate-to-source breakdown voltage (BVGS) is 8V. It features a low gate capacitance of 1.5pF and a low gate leakage current of 0.5µA. It has a very low on resistance of 0.25 ohms and a high maximum drain current of 35A.

The FQD19N10TF works on the principle of field effect. It consists of three terminals; source, gate and drain. The source and drain terminals are connected to the two sides of a semiconductor channel through which the current can flow. The gate terminal is used to control the current flow through the channel, which is done by applying a voltage or current at the gate terminal. When a voltage or current is applied to the gate terminal, it creates an electric field that deflects the charge carriers in the channel, resulting in a change in the drain current.

When the gate voltage is low, the MOSFET is in its off-state, and no current flows. When the gate voltage is high, the MOSFET is in its on-state, and current flows through the channel. The source and drain terminals are also connected to the supply voltage, so the current flow is determined by the voltage difference between the source and the drain terminals. The amount of current that can flow through the channel is determined by the strength of the electric field created by the applied gate voltage.

FQD19N10TF has several advantages over other types of transistors such as high switching speed, low noise, high efficiency, and long life. These features make it ideal for use in applications where high speed and low noise are required. It is also known for its high efficiency, which allows it to minimize power loss. This makes FQD19N10TF a great choice for use in power converters, motor controllers, and other industrial equipment.

The specific data is subject to PDF, and the above content is for reference