Allicdata Part #: | FQD16N15TF-ND |
Manufacturer Part#: |
FQD16N15TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 11.8A DPAK |
More Detail: | N-Channel 150V 11.8A (Tc) 2.5W (Ta), 55W (Tc) Surf... |
DataSheet: | FQD16N15TF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 55W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 910pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 5.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11.8A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FQD16N15TF is a type of field effect transistor also known as an insulated-gate field-effect transistor or MOSFET. It is a power semiconductor device that is used in applications such as motor control, switching, power management, or voltage amplification. FQD16N15TF is a type of single MOSFET which means that it can only operate in the saturation region and is not suitable for linear operation. FQD16N15TF is usually used in less demanding applications such as low-power motor control. The device structure of FQD16N15TF is made up of a source, a drain, and a gate. The source of FQD16N15TF is attached to the drain through thin metal oxide gate. The thin gate oxide increases the capacitance between the gate and the source/drain. This capacitance controls the current between the gate and the source/drain. The current is controlled when the gate voltage is changed. In addition, FQD16N15TF also has a reverse polarity protection feature which prevents the gate from becoming "stuck" in an "on" or "off" state.The main advantage of FQD16N15TF is its low on-state resistance, which is a measure of how much resistance is present when the device is in a "on" state. This makes FQD16N15TF suitable for applications where power consumption needs to be minimized such as motor control and power management. In addition, FQD16N15TF also has a low gate-source capacitance, which is a measure of how much capacitance is between the gate and source. This low gate-source capacitance enables FQD16N15TF to have a very fast switching time, making it suitable for high-speed switching and logic circuits. FQD16N15TF has an absolute maximum rating of 20A and 60V, and a breakdown voltage rating of 60V. FQD16N15TF has an on-resistance of 41.4mΩ, an off-state leakage current of 0.1µA maximum, and a minimum On-Time of 250ns. In addition, FQD16N15TF also has a peak gate drain voltage rating of 20V and a storage temperature range of -55 to 150℃. All these ratings and specifications make FQD16N15TF suitable for a wide range of applications. FQD16N15TF is commonly used in motor control and switching applications, but due to its low gate-source capacitance and fast switching speed, it can also be used in logic circuits as well as power management applications. FQD16N15TF is also especially suitable for applications where smooth and linear control of speed and rotation is necessary, such as in brushless DC motors. FQD16N15TF is also extremely durable and reliable, making it a great choice for long-term projects. It also has a wide operating temperature range of -55℃ to 150℃, which makes it suitable for automotive and other outdoor applications.In summary, FQD16N15TF is one of the most popular and widely used MOSFETs. It has a low on-resistance and a low gate-source capacitance which makes it suitable for use in motor control, switching, power management, logic circuits and voltage amplification applications. Its wide operating temperature range, reverse polarity protection features, and low off-state leakage current make it an ideal choice for automotive and outdoor applications.
The specific data is subject to PDF, and the above content is for reference
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