FQD12P10TM-F085

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FQD12P10TM-F085 is a N-channel enhancement mode power MOSFET manufactured by Fairchild Semiconductor. It is a type of field-effect transistor (FET), which is an electronic switch operated using electrical signals. MOSFETs like the FQD12P10TM-F085 are frequently used in most digital circuits as a way to control the flow of electricity since they have a low resistance when a voltage is applied to their drain-source path, but also have very low input impedance. Consequently, MOSFETs are great switches for power applications and can switch quickly without generating a lot of heat.

In particular, the FQD12P10TM-F085 features a very low on-resistance in the off state, which allows it to handle higher power with less heat and greater efficiency than other MOSFETs. It also has a higher voltage rating than most standard MOSFETs, up to 60 volts. Additionally, the FQD12P10TM-F085 is ESD protected and is RoHS compliant.

The FQD12P10TM-F085 is a perfect choice for applications requiring high current but with low power consumption. It is suitable for motor control, high current power supplies, and other power-hungry devices. The FQD12P10TM-F085 also finds application in DC-DC and AC-DC converters, as well as LED, audio and LCD drivers.

The working principle of the FQD12P10TM-F085 is based on the MOSFETs ability to control the flow of electricity. When voltage is applied to the gate of the FQD12P10TM-F085, it creates an inversion layer and allows electrons to flow between the drain and source. This creates an electric current between the drain and source and allows electricity to flow, thus turning the MOSFET on and allowing current to flow through the device. When the voltage is removed from the gate, the MOSFET turns off and the current stops flowing.

In summary, FQD12P10TM-F085 is a N-channel enhancement mode power MOSFET manufactured by Fairchild Semiconductor that is suitable for high current applications with low power consumption. It has a low on-resistance in the off state and can handle higher power with less heat and greater efficiency than other MOSFETs. It also has an ESD protection and is RoHS compliant. The working principle of the FQD12P10TM-F085 is based on its ability to control the flow of current through the device when voltage is applied to the gate.

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