FQD10N20CTM Discrete Semiconductor Products |
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| Allicdata Part #: | FQD10N20CTMTR-ND |
| Manufacturer Part#: |
FQD10N20CTM |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 200V 7.8A DPAK |
| More Detail: | N-Channel 200V 7.8A (Tc) 50W (Tc) Surface Mount D-... |
| DataSheet: |  FQD10N20CTM Datasheet/PDF |
| Quantity: | 10000 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 50W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 510pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 360 mOhm @ 3.9A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 7.8A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The FQD10N20CTM is an advanced and high performance advanced n-Channel MOSFET (metal–oxide–semiconductor field-effect transistor) designed for switching and computer power supply applications. It features very low threshold voltage and has outstanding RDS(on) performance for very low voltage drives. This device is suitable for applications ranging from high-efficiency switching regulators and DC/DC converters to computer power supplies.
The FQD10N20CTM is produced using a 10 nm gate process, providing superior RDS(on) and fast switching performance. Additionally, the device is manufactured using S-MOS technology, making it highly reliable and providing superior ESD protection. The MOSFET is also known for its high frequency characteristics, as it is capable of handling up to 70 MHz of switching frequency.
The FQD10N20CTM features a maximum RDS(on) of 10 mΩ at 10 V. This device is also capable of an operating temperature range of -40 °C to 105 °C and a drain-source breakdown voltage of 200 V. It has a maximum drain source voltage of 20 V, which gives it a superior performance compared to other MOSFETs in the same range.
The FQD10N20CTM device utilizes a patented reverse-conducting structure to increase its efficiency. This structure allows the device to switch faster and at lower voltages, thus reducing power losses. This feature also allows the device to operate in high-frequency switching applications such as those used for motor control.
In addition to its high performance and efficiency, the FQD10N20CTM offers a number of other advantages. It can operate at high voltages up to 200 V, and it also has a very low leakage current, making it ideal for applications such as low-power portable devices. It also offers a low input capacitance, which is necessary for high speed switching.
The FQD10N20CTM device is one of the most advanced n-Channel MOSFETs available on the market. Its low RDS(on) and fast switching capabilities make it perfect for a variety of power supply applications. It is also known for its reliability and excellent ESD protection. The device is suitable for use in a variety of power applications and is a great choice for high efficiency, low power switching and DC/DC conversion.
The specific data is subject to PDF, and the above content is for reference
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