FQD13N06TM Discrete Semiconductor Products

The FQD13N06TM is a field-effect transistor (FET) designed for low-voltage switching applications. It is part of FETs (Field-Effect Transistor) and MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). Specifically, the FQD13N06TM is a type of single MOSFET, meaning that it is a single device made of one gate, source and drain. This single transistor works based on the principles of a FET in which electrical signaling is achieved by controlling the electric field (not the current).

FETs are widely used in modern digital circuits as they provide good switching speed and low on/off ratios. The FQD13N06TM exhibits low total gate charge, low gate resistance, and fast switching speed for enhanced performance. It is designed for battery-powered and automotive applications, and features integrally-doped resistive area (IDA) to ensure verified drain-to-source current resistance.

The FQD13N06TM offers high-end features and benefits that make it an ideal choice for low-voltage switching applications. In addition to its improved performance characteristics, it offers a low on-resistance that results in less power consumption, high thermal conductivity for improved heat dissipation, and a range of voltage options. Further, its parallel connection configuration provides greater current handling capability, allowing it to be used in higher current applications.

The working principle of the FQD13N06TM is simple. A voltage source is connected between the source and drain of the transistor. When the voltage reaches a certain threshold, the current conducing channel between the source and drain will be opened and current will flow. The amount of current that can flow is controlled by the amount of voltage applied to the gate. As the voltage is increased, more current flows, allowing the transistor to perform its switching action.

In summary, the FQD13N06TM is a single, low-voltage switching MOSFET which offers low on-resistance, high thermal conductivity, and fast switching speed for efficient performance. It is designed for use in battery-powered and automotive applications and provides low total gate charge and low gate resistance. The FQD13N06TM works on the principles of a FET in which electrical signaling is achieved by controlling the electric field.