FQD17N08LTM Allicdata Electronics

FQD17N08LTM Discrete Semiconductor Products

Allicdata Part #:

FQD17N08LTMTR-ND

Manufacturer Part#:

FQD17N08LTM

Price: $ 0.34
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 80V 12.9A DPAK
More Detail: N-Channel 80V 12.9A (Tc) 2.5W (Ta), 40W (Tc) Surfa...
DataSheet: FQD17N08LTM datasheetFQD17N08LTM Datasheet/PDF
Quantity: 1000
2500 +: $ 0.30328
Stock 1000Can Ship Immediately
$ 0.34
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 5V
Series: QFET®
Rds On (Max) @ Id, Vgs: 100 mOhm @ 6.45A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FQD17N08LTM is a high current, low voltage (VDS) Field Effect Transistor designed for a variety of applications. It can be used in a wide range of applications, from switch-mode power supplies, motor control, and audio amplifiers, to industrial and automotive DC-DC voltage conversion. The FQD17N08LTM is a n-channel MOSFET, which is a type of Field Effect Transistor (FET) which has no gate current and which is controlled by an electric field applied between its gate and source terminals.

The FQD17N08LTM is a general-purpose FET, which means that it can be used in a variety of different applications, including but not limited to switching, amplified driver, and audio amplifier. Its wide range of applications makes it a very versatile device and a good choice for industrial and automotive applications.

The FQD17N08LTM has a maximum drain current of 8A, a maximum drain-source breakdown voltage of 15V, and a maximum drain-source saturation voltage (VDSat) of 0.75V. It also has a low gate threshold voltage, which makes it suitable for many applications. The FQD17N08LTM is available in an 8-pin surface mount package, making it easy to install and use.

The FQD17N08LTM utilizes MOSFET technology, which is based on the idea of using an electric field to control the flow of current through the device. The most common type of MOSFET is a n-channel MOSFET, which has no gate current and which is controlled by an electric field applied between its gate and source terminals. The electric field causes the drain current to be proportional to the gate voltage, allowing for circuit switching, amplification, and other control applications.

The FQD17N08LTM is an excellent choice for a variety of applications, due to its low voltage (VDS) and high current ratings. It can also be used in a variety of different configurations, making it an ideal choice for many industrial and automotive applications. In addition, the FQD17N08LTM can also be used in a variety of switching, amplifier, and audio applications due to its low gate threshold voltage.

In conclusion, the FQD17N08LTM is a versatile, high current, low voltage MOSFET ideal for a variety of applications. It has a low gate threshold voltage, making it suitable for a wide range of switching, amplifier, and audio applications. The FQD17N08LTM is available in an 8-pin surface mount package and can be used in many different configurations, making it perfect for industrial and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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