FQD1N80TM Discrete Semiconductor Products |
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Allicdata Part #: | FQD1N80TMTR-ND |
Manufacturer Part#: |
FQD1N80TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 800V 1A DPAK |
More Detail: | N-Channel 800V 1A (Tc) 2.5W (Ta), 45W (Tc) Surface... |
DataSheet: | FQD1N80TM Datasheet/PDF |
Quantity: | 20000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 195pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 7.2nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 20 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FQD1N80TM is a high voltage, fast switching N-Channel MOSFET (metal-oxide-semiconductor field-effect transistor). This type of field-effect transistor is specifically designed for high switching speeds and offers an extremely low on-state resistance, making it an ideal choice for use in a wide variety of applications.A field-effect transistor (FET) is a type of transistor that has a variable output current making it ultra-sensitive to changes in input voltage. Unlike other transistors, the FQD1N80TM operates with a single gate and requires a relatively low gate voltage to switch on.The FQD1N80TM is capable of providing a high level of performance due to its low on-state resistance (RDSon) and high voltage withstand capability, making it a suitable choice for applications that require a compact yet powerful solution.Due to its low power consumption, the FQD1N80TM can be used in many different types of applications. It can be used in motor and motor control applications, switching power supplies, DC-DC converters, and other high-voltage switching applications.The FQD1N80TM has a Drain-Source voltage of 800V, a Drain-Source current of 1A, and a total Gate-Source voltage of 10V, making it extremely versatile. The MOSFET is available in three different package types; TO-220F, TO-252 and SOP-8.The working principle behind the FQD1N80TM is that when the Gate voltage is higher than the Source voltage a conductive channel is formed between the Drain and Source. This in turn allows current to flow from the Drain to Source. As the voltage across the Gate is increased, the channel in the MOSFET becomes wider, allowing for an increased flow of current. When the Gate voltage is zero or negative, the channel is shut off and the MOSFET is off.Thanks to its low on-state resistance and high voltage withstand capabilities, the FQD1N80TM is an ideal choice for applications where power saving and higher performance are vitally important. Its high switching speed allows it to offer highly efficient switching with minimal power loss making it a cost-effective, energy-saving solution.Overall, the FQD1N80TM is an ideal choice for applications that require a powerful yet compact solution. Its versatility and performance make it an excellent choice and it can be used in a wide range of applications, such as motor control and switching power supplies.
The specific data is subject to PDF, and the above content is for reference
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