FQD16N25CTM Allicdata Electronics
Allicdata Part #:

FQD16N25CTMTR-ND

Manufacturer Part#:

FQD16N25CTM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 250V 16A D-PAK
More Detail: N-Channel 250V 16A (Tc) 160W (Tc) Surface Mount D-...
DataSheet: FQD16N25CTM datasheetFQD16N25CTM Datasheet/PDF
Quantity: 7500
Stock 7500Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 160W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 53.5nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 270 mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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FQD16N25CTM is a high-quality N-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). As a type of field-effect transistor, the FQD16N25CTM uses an electric field to control the conductivity between source and drain terminals. This device is highly efficient and requires a low voltage supply in order to control current through its gate terminal. In addition, FQD16N25CTM has a low on-resistance, fast switching speed, and low gate threshold voltage.

Compared to other conventional MOSFETs, FQD16N25CTM has advantages such as higher switching frequency and low power dissipation. It also has a much lower gate capacitance, leading to faster turn-on times and better performance when compared to other power transistors. FQD16N25CTM is widely used in consumer electronics applications such as AC/DC systems, power management units, motor control units, etc.

The FQD16N25CTM is most commonly used for its switching capabilities. When the gate voltage is applied, the voltage is capable of regulating the flow of current between drain and source terminals, thus allowing for a controlled output. Additionally, this MOSFET also has a fast switching speed, allowing it to be responsive when needed. This makes FQD16N25CTM a great choice for high power switching applications.

In addition to its switching capabilities, the FQD16N25CTM is also capable of amplification. This is made possible by its high input impedance and low output impedance. This allows for accurate and precise control over the flow of current through its tested gates, leading to better accuracy when amplifying signals. This MOSFET is great for applications requiring high gain or high voltage amplification.

Aside from its amplification capabilities, FQD16N25CTM is also equipped with ESD protection. This feature is designed to protect it from electrostatic discharge, which can otherwise damage the device. The ESD protection is also capable of protecting the device against overvoltage and is compliant with the IEC61000-4-2 standard.

FQD16N25CTM is a great choice for applications that require high current and fast switching, as well as applications that require low power loss as well as voltage and current amplification. Its low profile design, fast switching and high power capabilities make FQD16N25CTM a great choice for a wide range of industrial and consumer electronics applications, making it an ideal choice for just about any application needing fast and efficient power management.

The specific data is subject to PDF, and the above content is for reference

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