FQD12N20LTM-F085P

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FQD12N20LTM-F085P is a type of field-effect transistor (FET). FETs are a type of transistor which utilizes a drain-to-source electric field to control the current flow between source and drain electrodes. FETs are usually used as power-switching devices in various applications. FQD12N20LTM-F085P is a low thermal resistance, N-channel enhancement-mode device and is designed to be used as a switch or a linear amplifier.

FQD12N20LTM-F085P is mainly used in motor controls, switch-mode power supplies, and industrial applications. This MOSFET is constructed with an N-channel enhancement-mode vertical double-diffused metal oxide semiconductor (DMOS) and is particularly suitable for high-speed switching and linear applications. It is also suitable for level shifting and high-speed logic circuits and has been optimized for very low gate drive power.

The FQD12N20LTM-F085P has a Drain-to-Source Voltage of 360V, a Gate-to-Source Voltage of 20V, and an on-state Drain Current of 12A. It has a low RDS(on) of 4.25mΩ, meaning that it is capable of producing a high amount of power while dissipating minimal power. The device has a total Gate Charge of 171nC and a low Gate-to-Source Capacitance, making it ideal for high-frequency switching applications.

The working principle of the FQD12N20LTM-F085P is very simple. It works by relying on a phenomenon known as the “field effect”. When a positive gate voltage is applied to the gate terminal, it creates an electric field which alters the shape of the depletion region around the gate, allowing current to flow between the source and drain electrodes. As the gate voltage is increased, the amount of current flowing increases, which is how the transistor is used as a switch or amplifier.

The FQD12N20LTM-F085P is a very versatile device and can be used in a wide variety of applications. It is widely used in motor controls, switch-mode power supplies, and other industrial applications. It is also well-suited for use in level shifting and high-speed logic circuits. The device is well-designed with a low thermal resistance and low gate drive power, which makes it ideal for high-speed switching applications.

In conclusion, the FQD12N20LTM-F085P is a versatile and efficient field-effect transistor. It is designed with a low thermal resistance, low Gate Charge, and low Gate-to-Source Capacitance, making it well-suited for use in a variety of high-speed switching and linear applications. Its working principle is straightforward and easy to understand, making it a popular choice for designers and engineers.

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