
Allicdata Part #: | FQD12N20LTMTR-ND |
Manufacturer Part#: |
FQD12N20LTM |
Price: | $ 0.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 9A DPAK |
More Detail: | N-Channel 200V 9A (Tc) 2.5W (Ta), 55W (Tc) Surface... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.30000 |
10 +: | $ 0.29100 |
100 +: | $ 0.28500 |
1000 +: | $ 0.27900 |
10000 +: | $ 0.27000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 55W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1080pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 5V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 280 mOhm @ 4.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FQD12N20LTM is a field effect transistor (FET) built by Fairchild. It is specifically a N-channel MOSFET (Metal Oxide Semiconductor FET) and belongs to a series of FETs called “HVFETs”, due to their higher voltage ratings despite their relatively low power density.
This device is used in a wide range of applications, ranging from low-frequency power amplifiers to high-speed switching applications. This is mainly because its performance is generally superior to other types of FETs due to their higher drain-source breakdown voltages, high input impedance, low static drain-source resistance and low gate-source capacitances.
One primary application of the FQD12N20LTM is its usage as a power amplifier; It can be used to amplify a weak signal, such as a low-frequency audio signal, boost the voltage of the signal, without generating much distortion. This is because of its high input impedance, which allows for more efficient signal amplification.
The FQD12N20LTM device also has a wide range of applications in power switching. Due to its low drain-source resistance and high voltage ratings, the device is suitable for applications such as DC-DC converters, flyback converters and buck converters, which enables more efficient power transfer and provides high-efficiency power conversion.
The working principle of the FQD12N20LTM is quite simple. A small electrical current applied to the gate terminal of the device controls the voltage between the drain and source terminals. When the gate voltage is higher than the voltage at the drain and source terminals, the device opens, allowing current to flow from the source to the drain. The current is then passed through the load, and the voltage is regulated by the resistance of the load.
Thus, the device essentially works as a switch, and only by changing the gate voltage, the device can be turned ‘on’ or ‘off’ in order to control the current flow through the load. The gate-source capacitance of the device is also quite low, further increasing its switching speed and allowing for high-speed power switching applications.
The FQD12N20LTM is a versatile device with wide ranging applications, due to its features such as high input impedance, low static drain-source resistance and low gate-source capacitances. Its usage as a power amplifier for low-frequency audio signals and for high-speed switching applications makes the device a reliable and efficient choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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