Allicdata Part #: | FQD20N06LTM-ND |
Manufacturer Part#: |
FQD20N06LTM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 17.2A DPAK |
More Detail: | N-Channel 60V 17.2A (Tc) 2.5W (Ta), 38W (Tc) Surfa... |
DataSheet: | FQD20N06LTM Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 38W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 630pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 5V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 8.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17.2A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FQD20N06LTM is a power MOSFET (metal oxide semiconductor field effect transistor) with an advanced cell design. This wide band power MOSFET offers the ideal combination of high switching performance, low on-resistance, fast switching speed and low leakage. It is suitable for use in high-efficiency MOSFET amplifiers and DC-to-DC converters, as well as high-frequency switching applications.
FQD20N06LTM has a maximum drain-source voltage of 60V and a maximum drain current of 20 A. It is available in a TO-220 package and has a low thermal resistance for its size. The device has been designed to safely take care of its operating environment. It has a RDS (on) of 5 mΩ @ 10 V and a Gate charge (Qg) range of/from 12 to 15 nC.
The FQD20N06LTM is a floating-gate MOSFET. The device consists of two power MOSFETs in series whose gates are connected to a drain-source terminal. This arrangement allows the FQD20N06LTM to operate in two different modes: in a "normal" configuration, when the voltage applied to the drain is greater than that applied to the source; and in a "reverse" configuration, when the voltage applied to the drain is less than that applied to the source. In either case, the device can be used to switch several power MOSFETs in series with the same gate voltage.
In normal configuration, the FQD20N06LTM acts as an electrically steady, low impedance switch for controlling current flows. Its low on-resistance and low gate charge characteristics allow it to be used in applications with high switching frequencies, such as in switched-mode power supplies. In reverse configuration, the FQD20N06LTM behaves as a low power current limiter, reducing the risk of short circuits and current overloads.
The FQD20N06LTM is also used in high power converters, such as motor controllers, electronic motor drives and AC inverters. In these applications, the MOSFET switches the current in a way that helps maintain a constant speed and torque during motor operation. The FQD20N06LTM also helps protect the motor from high voltage spikes that could otherwise damage the motor or other components.
The device can also be used for high speed switching in telecommunications equipment, such as routers and cable modems. In addition, it is an ideal solution for switching application in data communication networks, such as routers, servers, and switches. These applications require high speed switching capabilities to support multiple services and to increase data transmission rates.
The FQD20N06LTM is a reliable, high performance power MOSFET with enhanced features. It is easy to use and suitable for many high-efficiency and high-frequency switching applications. It offers the ideal combination of cost, performance, and safety.
The specific data is subject to PDF, and the above content is for reference
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