FQD2N60TF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FQD2N60TF is a n-channel enhancement type Field-Effect Transistor (FET) designed for use in demanding, low-power switching and linear amplification applications. It is a member of the FQD series of JEDEC-classified n-channel FETs. This particular device is manufactured using STMicroelectronics’ latest FlashFlo LDMOS process, providing superior switching and linear performance within a wide temperature range and supply voltage.

Applications

The FQD2N60TF is well-suited for a variety of applications requiring low-power switching and linear amplification. Main application areas include actuator control, audio amplifiers, gate and continuity sensing, motor control, power control, and amplifier ICs. Additionally, features like low on-state resistance, low gate-to-source and drain-to-source capacitances, and low gate-charge make the FQD2N60TF an excellent choice for switching and low-power linear applications.

Working Principle

The FQD2N60TF is an N-channel MOSFET, which is a type of transistor that works based on the metal-oxide-semiconductor (MOS) principle. In this type of device, a conductive channel formed between the source and drain electrodes is modulated by a gate voltage applied between the gate and source electrodes, relative to the source. This modulation controls the resistance between the source and drain terminals and as such, the drain current. The device also has a positive temperature coefficient which leads to reduced on-state resistance and better switching characteristics.

When the gate voltage is raised positively with respect to the source, the presence of an electric field between the gate and channel causes electrons to be repelled from the surface of the channel, resulting in a decreased conductivity of the channel. At the same time, the presence of holes in the channel allows for a higher conductivity. This modulation of the conductivity by the gate voltage forms the basis of the MOSFET’s operation.

Conclusion

The FQD2N60TF is a n-channel enhancement-mode MOSFET designed for low-power switching and linear amplification applications. This device is well-suited for applications ranging from gate and continuity sensing, to motor control and amplifier ICs due to its low gate-charge and gate-to-source and drain-to-source capacitances. Its operating principle is based on the modulation of the channel conductivity through a gate voltage applied relative to the source.

The specific data is subject to PDF, and the above content is for reference