| Allicdata Part #: | FQD20N06TF-ND |
| Manufacturer Part#: |
FQD20N06TF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 60V 16.8A DPAK |
| More Detail: | N-Channel 60V 16.8A (Tc) 2.5W (Ta), 38W (Tc) Surfa... |
| DataSheet: |  FQD20N06TF Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 38W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 590pF @ 25V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 63 mOhm @ 8.4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 16.8A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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FQD20N06TF is a field-effect transistor (FET) manufactured by Fuji Electric. It is a type of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed for use in high-power, high-efficiency applications. It is a 20-volt N-channel FQD20N06TF with a continuous drain current of 6 amperes (A) and a maximum drain-source voltage of 30 volts.
FQD20N06TF has a number of characteristics that make it suitable for use in power-management applications. It has a low on-resistance of 0.4Ω and a low gate-source threshold voltage of 2.0V. In addition, it has a high breakdown voltage of 40V, making it well suited for use in high-voltage applications. Furthermore, FQD20N06TF features a low gate-leakage current and low gate-capacitance, making it suitable for high-speed switching applications.
The working principle of FQD20N06TF is based on the MOSFET structure. It consists of three terminals known as the source, the drain, and the gate. The source and drain are some of the electrical contacts and the gate is the input voltage or current. When a voltage is applied between the gate and the source, the electric field generated by that voltage forms an electric channel between the source and the drain. This channel is known as the MOS channel and it is what allows the FQD20N06TF to amplify, switch, or regulate power.
FQD20N06TF generally finds application in power electronic circuits. It is commonly used in DC-DC and AC-DC Converters, Reverse Polarity Protection (RPP) circuits, and overvoltage protection (OVP) circuits. It is also used in power adapters, motor drives, and lighting systems, among other applications. FQD20N06TF is also used for power control applications such as power-good signal generation and power-saving function implementation.
In conclusion, FQD20N06TF is a 20-volt N-channel MOSFET with a continuous drain current of 6 A and a maximum drain-source voltage of 30 volts. Its low on-resistance and a low gate-source threshold voltage make it well suited for high-power, high-efficiency applications. It has a number of characteristics that make it suitable for power-management applications as well as power control and power electronic circuits. Thus, FQD20N06TF is a versatile MOSFET that is used for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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