Allicdata Part #: | FQD2P40TF-ND |
Manufacturer Part#: |
FQD2P40TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 400V 1.56A DPAK |
More Detail: | P-Channel 400V 1.56A (Tc) 2.5W (Ta), 38W (Tc) Surf... |
DataSheet: | FQD2P40TF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 38W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 6.5 Ohm @ 780mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.56A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FQD2P40TF is a component of a N-channel MOSFET type of Transistor. This is one of the most essential components of various modern electronic devices, and is found in many different types including Digital Signal Processors (DSPs) and audio amplifiers. It is designed to be used as a power device, and is a part of the field of power electronics.
The FQD2P40TF is a single, low voltage, N-Channel MOSFET Composite Transistor. It is primarily used in applications such as powering systems, power on/off switching, and load switching. It provides fast switching speeds and requires low gate drive power. It can also be used in other applications, depending on the specifications that are given in the corresponding product’s datasheet. The main purpose of the transistor is to act as a switch, which is controlled by a small flow of current from a gate voltage to the source voltage.
The FQD2P40TF features high switching speed, high efficiency, and low gate voltage. It is also capable of providing a low on-resistance, which is one of its main advantages. This low on-resistance allows for a great amount of power to be generated even when the input current is low. The FQD2P40TF also features a high degree of breakdown voltage, which is the voltage at which a MOSFET begins to break down in the presence of an electric current.
The working principle of the FQD2P40TF is relatively straightforward. When the gate voltage is applied to the source voltage, electrons in the channel move from the source to the gate, creating a path between the two. The current flowing through the channel is proportional to the amount of electricity induced, which is then amplified by the transistor and sent to the output.
The FQD2P40TF is suitable for a wide range of application fields. It can be used in applications such as power management, power on/off switching, load switching, and audio amplifiers. It can also be used in general power switching applications. The components provided within the component are well suited for these applications, though they can also be used in any application where a MOSFET component is necessary.
In conclusion, the FQD2P40TF is a single, low voltage N-Channel MOSFET Composite Transistor that is designed to provide fast switching and low gate drive power. It is suitable for a wide range of applications, including those requiring power management, power on/off switching, load switching, and audio amplifiers. As part of the field of power electronics, the FQD2P40TF is designed to provide a low on-resistance, with a high degree of breakdown voltage, and has the working principle of a MOSFET, in which the current between the gate and the source is amplified by the transistor.
The specific data is subject to PDF, and the above content is for reference
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