FQD2N100TM Discrete Semiconductor Products |
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Allicdata Part #: | FQD2N100TMTR-ND |
Manufacturer Part#: |
FQD2N100TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 1000V 1.6A DPAK |
More Detail: | N-Channel 1000V 1.6A (Tc) 2.5W (Ta), 50W (Tc) Surf... |
DataSheet: | FQD2N100TM Datasheet/PDF |
Quantity: | 15000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 520pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 15.5nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 9 Ohm @ 800mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.6A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FQD2N100TM is a new type of transistor that has found its application in both industrial and consumer areas. It is a single-gate Field Effect Transistor (FET) in a three-lead package that offers low-on-resistance and low-on-resistance-to-gate current ratio. It is useful in a wide range of applications in both analog and digital circuits.
A FET is an electronic device that works on the principle of capacitance. This means that when the voltage across two electrodes is changed, a small amount of current flows between them, creating a capacitive effect. A FET is a three-terminal device, with the Gate as the control terminal, Source as the input terminal and Drain as the output terminal. In a FET, the Gate potential is used to control the flow of current from the Source to the Drain, so that the FET works as a voltage-controlled device.
FQD2N100TM utilizes a novel semiconductor material for low-on-resistance and low-on-resistance-to-gate current ratio. This new material has high-switching frequency and low gate capacitance. FQD2N100TM also has a temperature compensation feature, which is useful in maintaining a constant temperature when the device is in operation.
The most common application of FQD2N100TM is in power tools and consumer electronic devices. It is suitable for switching high current loads, and is used as a motor controller in a variety of motor applications. In addition, it has found applications in high-frequency circuits and amplifiers, as well as in microprocessor-based systems.
FQD2N100TM is also used in the development of integrated circuits. It can be used to design logic gates and generate pulsed signals, which is essential for high-speed and high-frequency circuits. FQD2N100TM can also be used for driving relays and solenoids, and for controlling the speed of motors.
FQD2N100TM is a very reliable, high-performance device, which is available in different packages to suit specific application requirements. With its low on-resistance and low on-resistance-to-gate current ratio, FQD2N100TM is well suited for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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FQD2N50TM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 500V 1.6A DPA... |
FQD2N50TF | ON Semicondu... | -- | 1000 | MOSFET N-CH 500V 1.6A DPA... |
FQD20N06LTF | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 17.2A DPA... |
FQD2N60TM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 2A DPAKN... |
FQD2N60TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 2A DPAKN... |
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FQD2N90TF | ON Semicondu... | -- | 1000 | MOSFET N-CH 900V 1.7A DPA... |
FQD2N100TM | ON Semicondu... | -- | 15000 | MOSFET N-CH 1000V 1.6A DP... |
FQD20N06TM | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 16.8A DPA... |
FQD2N60CTM | ON Semicondu... | -- | 10000 | MOSFET N-CH 600V 1.9A DPA... |
FQD2N90TM | ON Semicondu... | -- | 5000 | MOSFET N-CH 900V 1.7A DPA... |
FQD2N60CTM-WS | ON Semicondu... | 0.32 $ | 1000 | MOSFET N-CH 600V 1.9AN-Ch... |
FQD2N80TM | ON Semicondu... | -- | 1000 | MOSFET N-CH 800V 1.8A DPA... |
FQD2P40TM | ON Semicondu... | -- | 2500 | MOSFET P-CH 400V 1.56A DP... |
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