FQD2N60CTM-WS Discrete Semiconductor Products

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The FQD2N60CTM-WS is an advanced single N-channel MOSFET built using a proprietary super-junction technology. With an array of highly advanced and innovative features, this MOSFET is suitable for a range of applications, including DC/DC and AC/DC power supply converters, high-current switching and motor control.

In terms of its physical attributes, the FQD2N60CTM-WS is rated for a drain to source voltage of 600V, a drain current of 4.2A and a gate-source voltage of ±20V. It also has a power dissipation of 9W, a package type of D-PAK and a dual low-threshold voltage of 1.0V typ. It offers low on-resistance values and fast switching times, making it well suited for high-current switching and fast turn-on/turn-off rectification applications.

The FQD2N60CTM-WS\'s advanced single N-channel MOSFET technology provides a wealth of benefits in terms of its application field. It offers lower power dissipation and the capability to supply high-currents with excellent regulation. It can also provide reliable operation in high-frequency switching or in continuous-conduction applications. In terms of benefits, it also offers low on-voltage and high peak-power switching performance. It is also able to minimize RDS(on) and can be used in a wide range of voltage configurations.

To understand how the FQD2N60CTM-WS works, it is important to first understand the principles behind MOSFET technology. The super-junction technology used in the FQD2N60CTM-WS utilizes a combination of multiple device layers to form a single channel structure. The device is composed of an N-type polysilicon channel region and a P-type body region. The channel region has a positive charge, while the body region has a negative charge. The combination of these two regions creates a full-depletion MOSFET, providing low on-voltage performance and low leakage current.

The FQD2N60CTM-WS\'s single N-channel MOSFET is capable of high-frequency operation, making it suitable for power supplies and high-current switching applications. Its excellent low-on-state resistance and fast switching times provide a wide-range of options for various working conditions. Additionally, its capability to block reverse voltages and its over-temperature protection make it ideal for a wide range of applications.

The FQD2N60CTM-WS is a highly advanced and reliable MOSFET device built using a proprietary super-junction technology. With its high current capability and fast switching time, it is suitable for DC/DC and AC/DC power supplies, high-current switching and motor control applications. Additionally, with its low on-resistance and dual low-threshold voltage, it offers excellent over-temperature protection and higher switching performance. The FQD2N60CTM-WS\'s single N-channel MOSFET technology is an ideal solution for those looking for a powerful and reliable MOSFET device.

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