Allicdata Part #: | FQD2N80TF-ND |
Manufacturer Part#: |
FQD2N80TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 800V 1.8A DPAK |
More Detail: | N-Channel 800V 1.8A (Tc) 2.5W (Ta), 50W (Tc) Surfa... |
DataSheet: | FQD2N80TF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 550pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 6.3 Ohm @ 900mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FQD2N80TF Application Field and Working Principle
FQD2N80TF is a type of Field Effect Transistor (FET) from Fairchild Semiconductor specifically designed for high voltage, low on-resistance, low gate charge and fast switching application. It\'s a standard N-type power FET that uses FD-MOS technology to achieve high power efficiency and superior switching performance.
FQD2N80TF is an ideal and reliable choice for high frequency switching, like that found in switching dc-dc converters, lighting controls, battery power chargers, relay drivers and other applications that require low periodic and dynamic electrical losses. This FET is specifically designed to handle high voltage and power loads.
The FQD2N80TF has three sections; the drainage, the source and the gate. The source of the FET is connected to the external ground and has to be connected to the negative potential. The incoming signal is connected to the gate, and it is a control signal that in case of analog operations works as an input for guiding the current from the drainage to the source. The voltage across the drain and the source is provided by an external source and can be an AC or DC voltage.
Regarding the working principle, the gate of the FET is made up of two contacts that require a high impedance, so the input signal is an AC signal or voltage. In case of analog operation, the FET works as an adjustable resistor and the output current will be adjusted depending on the input signal, while in the case of digital operations the output current will be either enabled or disabled depending on the input voltage. An important feature of the FET is that it can be used either as a low-side switch, where the source will be connected to the negative potential, or as a high-side switch, where the drain will be connected to the positive potential. Either way, the FET is able to reach high switching times, which give the FET high achieving rate.
In terms of application field, FQD2N80TF is perfect for switching power circuits, as they operate in low-voltage levels. They can also be used in high power applications as they are able to handle high current load. This FET can be found in a range of electronic circuits, including dimmers, displays, audio amplifiers and full bridges. FETs are often used in the automotive field, like the car horn and the turn indicator. In addition, FET’s are widely used in telecommunications and other applications, such as remote control and hard disk drives.
Ultimately, with its low on-resistance, low gate charge, fast switching and FD-MOS technology, the FQD2N80TF makes it a great choice for high voltage, low power losses, fast operations and high power efficiency. Its wide range of application fields makes it an ideal device for a variety of tasks and scenarios.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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