FQD2N80TF Allicdata Electronics
Allicdata Part #:

FQD2N80TF-ND

Manufacturer Part#:

FQD2N80TF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 800V 1.8A DPAK
More Detail: N-Channel 800V 1.8A (Tc) 2.5W (Ta), 50W (Tc) Surfa...
DataSheet: FQD2N80TF datasheetFQD2N80TF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 6.3 Ohm @ 900mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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FQD2N80TF Application Field and Working Principle

FQD2N80TF is a type of Field Effect Transistor (FET) from Fairchild Semiconductor specifically designed for high voltage, low on-resistance, low gate charge and fast switching application. It\'s a standard N-type power FET that uses FD-MOS technology to achieve high power efficiency and superior switching performance.

FQD2N80TF is an ideal and reliable choice for high frequency switching, like that found in switching dc-dc converters, lighting controls, battery power chargers, relay drivers and other applications that require low periodic and dynamic electrical losses. This FET is specifically designed to handle high voltage and power loads.

The FQD2N80TF has three sections; the drainage, the source and the gate. The source of the FET is connected to the external ground and has to be connected to the negative potential. The incoming signal is connected to the gate, and it is a control signal that in case of analog operations works as an input for guiding the current from the drainage to the source. The voltage across the drain and the source is provided by an external source and can be an AC or DC voltage.

Regarding the working principle, the gate of the FET is made up of two contacts that require a high impedance, so the input signal is an AC signal or voltage. In case of analog operation, the FET works as an adjustable resistor and the output current will be adjusted depending on the input signal, while in the case of digital operations the output current will be either enabled or disabled depending on the input voltage. An important feature of the FET is that it can be used either as a low-side switch, where the source will be connected to the negative potential, or as a high-side switch, where the drain will be connected to the positive potential. Either way, the FET is able to reach high switching times, which give the FET high achieving rate.

In terms of application field, FQD2N80TF is perfect for switching power circuits, as they operate in low-voltage levels. They can also be used in high power applications as they are able to handle high current load. This FET can be found in a range of electronic circuits, including dimmers, displays, audio amplifiers and full bridges. FETs are often used in the automotive field, like the car horn and the turn indicator. In addition, FET’s are widely used in telecommunications and other applications, such as remote control and hard disk drives.

Ultimately, with its low on-resistance, low gate charge, fast switching and FD-MOS technology, the FQD2N80TF makes it a great choice for high voltage, low power losses, fast operations and high power efficiency. Its wide range of application fields makes it an ideal device for a variety of tasks and scenarios.

The specific data is subject to PDF, and the above content is for reference

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