Allicdata Part #: | FQD2N50TF-ND |
Manufacturer Part#: |
FQD2N50TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 1.6A DPAK |
More Detail: | N-Channel 500V 1.6A (Tc) 2.5W (Ta), 30W (Tc) Surfa... |
DataSheet: | FQD2N50TF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 230pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 5.3 Ohm @ 800mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.6A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FQD2N50TF is a very common type of Field-Effect Transistor (FET). It is a type of MOSFET, specifically a single drain-source FET. It is a versatile device that can be used in a variety of applications such as motor control, power switching, and power conditioning.
The FQD2N50TF is a four-pin device that includes a Gate, Drain, Source1, and Source2 contact. The gate and source pins provide a voltage potential between them to control the flow of current. When the potential between the gate and source is near 0V, the channel between them is “off” and no current flows. When the potential reaches the pinch-off voltage (also known as the threshold voltage) of the FET, the channel is “on” and current will flow between the drain and source. As the voltage continues to increase, the current also increases.
The FQD2N50TF can also be used as an electronic switch. It is typically used to switch a large voltage and/or current. Its features make it ideal for switching signal levels in audio circuits, high-voltage supplies, power lines, and many other applications. It is also often used in circuits to reduce noise, reduce power consumption, and provide safety features. When enabled, FQD2N50TF will open a closed circuit and allow current to flow through.
The working principle of FQD2N50TF is based on the concept of a channel between the drain and source that can be opened or closed based on a voltage potential. When a voltage applied to the FQD2N50TF’s gate exceeds the FET’s threshold voltage, a “channel” of electrons is formed between the drain and source. The electrons travel through the “channel” and provide a flow of current when the potential between the drain and source meets the threshold voltage. When the voltage drops below the threshold voltage, the channel is closed and no current will flow.
FQD2N50TF can be used in a variety of applications, including motor control, power switching, and power conditioning. As an electronic switch, it can be used to switch between high and low voltage signal levels, high-voltage supplies, and power lines. It can also be used to reduce noise, reduce power consumption, and provide safety features. The versatility of FQD2N50TF makes it an ideal choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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