FQD2N50TM Allicdata Electronics
Allicdata Part #:

FQD2N50TM-ND

Manufacturer Part#:

FQD2N50TM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 500V 1.6A DPAK
More Detail: N-Channel 500V 1.6A (Tc) 2.5W (Ta), 30W (Tc) Surfa...
DataSheet: FQD2N50TM datasheetFQD2N50TM Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 5.3 Ohm @ 800mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The FQD2N50TM is a device based on a field-effect transistor (FET) technology, an evolution of the standard MOSFET family. It is typically used in power control and circuit protection applications, thanks to its low on-state resistance and fast switching feature. It is very cost-effective, making it a good choice for manufacturers who are looking for high performance, but in a lower budget.

The FQD2N50TM is designed from the standard MOSFET family, with the addition of a field effect transistor (FET) for protection. The FET technology is used for protection to reduce the possibility of damaged transistors during operation, as well as for current control, effectively regulating the flow of electric current. It consists of a source, gate, and drain terminals that are of comparable size, but with a smaller gate-source capacitance than conventional MOSFETs. This helps provide a trade off between the device\'s on-state resistance and its switching characteristics.

A key feature of the FQD2N50TM is its fast switching feature, which drastically reduces power losses when the device is off. This is because of its low input capacitance. In addition, the device is able to operate at very high frequencies with low losses due to its low on-state resistance and high added-gate-source capacitance. Furthermore, the device is highly efficient thanks to its low on-state resistance, which allows it to provide longer power cycles and reduce power dissipated.

The FQD2N50TM device is typically used in a power control circuit, but can also be used in other applications such as circuit protection. This is because of its high input capacitance and low on-state resistance, which allow it to provide superior protection against over-current, over-voltage, and over-power issues, as well as improve the reliability of the system.

FQD2N50TM can also be used in applications where fast switching is required. Because of its fast switching capability, it can reduce power losses considerably. Moreover, it is also suitable for applications where peak power needs to be reduced due to its low input capacitance, which helps to reduce the peak voltage. Additionally, the device is suitable for motor and motor control applications, thanks to its gate protection feature.

In conclusion, the FQD2N50TM is a very effective device that can be used in a wide range of applications, due to its fast switching, low input capacitance, low on-state resistance, and gate protection features. It is also highly efficient and cost-effective, making it a solid choice for manufacturers looking for high performance in a lower budget.

The specific data is subject to PDF, and the above content is for reference

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