Allicdata Part #: | FQD2N30TM-ND |
Manufacturer Part#: |
FQD2N30TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 300V 1.7A DPAK |
More Detail: | N-Channel 300V 1.7A (Tc) 2.5W (Ta), 25W (Tc) Surfa... |
DataSheet: | FQD2N30TM Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 130pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 5nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 3.7 Ohm @ 850mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.7A (Tc) |
Drain to Source Voltage (Vdss): | 300V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FQD2N30TM is a new type of Field Effect Transistor (FET) which has recently been developed by a major electronics manufacturer. This new FET is a single-die device which combines the benefits of low voltage operation and low power consumption with a high degree of reliability. It is mainly used in power supply applications and switching applications, where high speed switching is required. In addition to this, FQD2N30TM is also suitable for other applications which require superior component performance and power saving characteristics.
The FQD2N30TM is a metal-oxide semiconductor field-effect transistor (MOSFET) which uses a voltage applied across the gate terminal to control the flow of current. This is because a MOSFET has a very high input impedance, meaning that it can take input signals from many electronic components without needing additional power. This means it can be used to switch large currents with minimal loss of power. The FQD2N30TM is also able to handle very high frequencies, allowing it to be used in high speed switching applications.
The FQD2N30TM transistors are generally easier to use than other types of FETs, as they are easier to configure and control. They have a high tolerance for heat and voltage, so they can operate at higher voltages while still remaining reliable. The FQD2N30TM is also very flexible in regards to its working parameters, allowing engineers to customize the device to fit their exact requirements. This makes the FQD2N30TM suitable for a variety of applications, including switching, linear operation, and power saving.
The working principle of the FQD2N30TM is quite simple. The device is designed so that when the gate voltage is applied, the drain-gate voltage increases, and this causes a current to flow through the device. This current is then used to switch the device, allowing the circuit to be switched on or off. As the current flows through the device, it creates a voltage drop across the device, and this voltage drop is used to control the amount of current that is allowed to flow through the device.
The FQD2N30TM is a highly efficient switching device which has been designed to offer superior performance in a wide range of applications. It is reliable, easy to use, and can handle a high number of switching cycles with minimal energy loss. This makes it suitable for many power supply applications and other high-speed switching applications, where superior component reliability and energy saving are necessary.
The specific data is subject to PDF, and the above content is for reference
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