FQD2N100TF

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The FQD2N100TF is a single field effect transistor (FET) in TO-252-3L packaging. The FET is designed for high-speed link applications and designed to provide superior performance and superior energy efficiency. The FQD2N100TF is a single FET which means it is build on a single N-channel FETs which means its drain and source pins are connected to the same supply voltage.

The FQD2N100TF has a drain current of 2.65A, a drain-source breakdown voltage of 100V, and a maximum operating temperature of 250°C. Additionally, the FQD2N100TF is available in various packages, such as Axial, SO-8, and PQFN-8.

The FQD2N100TF is mainly used in high-speed data link applications, such as Gigabit Ethernet, 100 Gigabit Ethernet, and 10G Ethernet. The FQD2N100TF is also used in other applications such as Bluetooth, WiFi, and Zigbee applications due to its low-voltage and fast switching capability. In addition, it is also used in automotive, aerospace, and industrial applications due to its high-temperature operational range and power efficiency.

The working principle of the FQD2N100TF is based on the gate-source voltage, drain-source voltage, and drain current of the FET. The FET is modified to perform according to the desired function. The gate voltage (Vgs) is applied to the gate of the FET, and the source voltage (Vds) is applied to the source of the FET. The magnitude of the Vds determines the amount of current that flows through the FET since the voltage drop across the drain and source is proportional to the magnitude of the Vds.

The FQD2N100TF is designed to operate with a drain-source voltage of up to 100V, with a current capacity of up to 2.65A. The maximum power, Pmax, of the FQD2N100TF is limited to 65W, which is relatively high for a single FET. The switching speed of the FQD2N100TF is also very high due to its high input capacitance, Ciss. The FQD2N100TF is capable of switching from ON to OFF state in typical 400nsec. The superior switching capability of the FQD2N100TF makes it highly suitable for fast data links and wireless applications.

The FQD2N100TF is also built with a low-on-resistance which helps in reducing the amount of power being consumed. The low on-resistance also allows for faster switching between the on and off states while providing superior performance. The FQD2N100TF is designed to have an extremely low total gate charge, Qg, which leads to lower power consumption and faster switching times. In addition, the FQD2N100TF is highly stable and can withstand surges up to 100V.

In conclusion, the FQD2N100TF is a single N-channel FET with a drain current of 2.65A, source voltage of 100V, operating temperature of 250°C, and switching speed of 400nsec. The FQD2N100TF is designed for high-speed data link applications such as Gigabit Ethernet, 100 Gigabit Ethernet and 10G Ethernet, and is also used in other applications due to its low-voltage and fast switching capability. Furthermore, the FQD2N100TF is designed with a low-on-resistance and an extremely low total gate charge which enables faster switching between the on and off states with lower power consumption.

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