FQD2N60CTF_F080

Introduction

The FQD2N60CTF_F080 is a single-phase, surface-mounted insulated-gate bipolar transistor (IGBT) of the newest technology for high-frequency switching applications. This single transistor combines outstanding switching performance and thermal characteristics in a versatile package.

Application Fields of FQD2N60CTF_F080

The FQD2N60CTF_F080 is a versatile IGBT with excellent dynamic and static switching performance, providing both efficient and cost-effective solutions for a wide range of applications. The functional demonstrations of the FQD2N60CTF_F080 include, but not limited to

• General switching applications for consumer electronics and home appliances;
• DC to DC converters and DC to AC (AC inverters) applications;
• Powertrain systems for hybrid, electric and fuel cell vehicles;
• UPS (uninterruptible power supply) and server power supply applications;
• Industrial motor drive and variable speed drive applications;
• Switched-mode power supplies in consumer electronics, IT/telecom and medical equipment;
• Battery chargers.

Working Principle of FQD2N60CTF_F080

The single, normally open FQD2N60CTF_F080 is a type of field-effect transistor (FET) that consists of a three-layer semiconductor device, with a source, a drain, and a gate as the three terminals. The gate terminal determines the conductivity between the source and drain by turning on or off the source-drain current path. The on-state resistance between the source and drain is controlled by the gate voltage.

The working mechanism of an FQD2N60CTF_F080 is based on the electrostatic field induced by the electric field charges on the insulated gate dielectric or the insulated gate oxide. When a gate voltage is applied to the FQD2N60CTF_F080, the chemical potential in the region between the source and the drain is changed, generating electrons and holes which form a conductive "channel" between the source and the drain.

The FQD2N60CTF_F080 provides linear control of drain current versus gate-source voltage of the transistor by controlling the width of electrons and holes conducting channel. When the applied gate potential is increased, the current in the channel increases linearly. When the gate potential is zero, the current in the channel is zero and is known as the "off-state" condition.

The current capability of FQD2N60CTF_F080 vary depending on the applied gate voltage, temperature, and the junction temperature of the device. Due to the insulated gate terminal of the device, FQD2N60CTF_F080 can handle a large amount of gate capacitance allowing it to operate at higher switching frequencies. This feature is suitable for a variety of high-frequency applications in consumer electronics and home appliances.

Conclusion

The FQD2N60CTF_F080 is a single-phase, surface-mounted insulated-gate bipolar transistor that provides outstanding switching performance and thermal characteristics. With excellent dynamic and static performance, FQD2N60CTF_F080 can be used for general switching applications, DC to DC converters, DC to AC (AC inverters) applications, powertrain systems, UPS and server power supply, industrial motor drive and variable speed drive, and battery charger applications.

The working mechanism of the FQD2N60CTF_F080 is based on the electrostatic field generated by electric field charges. The on-state resistance is controlled by gate voltage, and the linear control of drain current versus gate-source voltage is enabled by controlling the width of electrons and holes conducting channel. The high gate capacitance of the FQD2N60CTF_F080 enables its operation of higher switching frequencies, enabling its application in many high-frequency switching uses.