FQD2N80TM Discrete Semiconductor Products |
|
Allicdata Part #: | FQD2N80TMTR-ND |
Manufacturer Part#: |
FQD2N80TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 800V 1.8A DPAK |
More Detail: | N-Channel 800V 1.8A (Tc) 2.5W (Ta), 50W (Tc) Surfa... |
DataSheet: | FQD2N80TM Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 550pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 6.3 Ohm @ 900mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
An FQD2N80TM is a MOSFET (metal-oxide-semiconductor field-effect transistor) in a Single package. It operates in both N- and P-channel designs for excellent versatility and is highly optimized for switching applications.
The FQD2N80TM features a substantial drain current rating of 8A and total gate charge level 4.5nC to goal providing significant power density advantages. The device features low gate capacitance (1.2pF) to reduce gate drive losses and very low drive requirement for low-power consumption during switching. It also supports very low Rds(on) for ultra-low chip power consumption. Additionally, excellent immunity to temperature degradation makes it an ideal choice for operating environments where thermal performance is a priority.
The FQD2N80TM is a versatile switching device offering low total gate charge, low capacitance, low RDS(ON) combined with wide temperature range and superior thermal performance. This makes it particularly well suited for the most demanding conditions found in power electronics applications such as audio amplifiers, HVAC systems, lighting and motor control. Additionally, its low gate charge and low drive are well suited to high frequency applications such as data converters, clocks and amplifiers.
The working principle of the FQD2N80TM is based on the gate or source voltage being used to control a capacitor, which in turn controls current flow through the transistor. This concept is typically known as “voltage controlled current” since the transistor is used to control the current flow. This control is achieved by varying the charge on the gate, and this in turn affects the transistor’s own internal capacitance parameters. The result is that the current can be adjusted from zero to the rated drain current depending on the source voltage.
In its simplest form, the FET can be used as a switch between two terminals, either a source and a drain, or a drain and a source. It is usually in its off state, meaning current is not flowing through it. When a voltage signal is applied to the gate, it will act as a switch and allow current to flow through the channel. This can be used to switch power devices such as relays, DC motors, and other power driven components.
The FQD2N80TM is well suited for use with both single-phase and multi-phase applications, such as power conversion and motor control systems. In addition to its switching capabilities, the device can be used as a current sensor or amplifier. When used in motor control applications, the device can also be used to measure the speed or position of a motor.
The FQD2N80TM is an excellent choice for applications that require a highly efficient and reliable switch with low capacitance and low gate drive requirement. It is often used to deliver high power outputs, reduce system power consumption, and improve overall system reliability.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FQD2N80TM_WS | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 800V 1.8A DPA... |
FQD2N60CTF_F080 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 1.9A DPA... |
FQD2P40TF_F080 | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 400V 1.56A DP... |
FQD2N40TF | ON Semicondu... | -- | 1000 | MOSFET N-CH 400V 1.4A DPA... |
FQD2N40TM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 400V 1.4A DPA... |
FQD2N30TM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 300V 1.7A DPA... |
FQD2N60CTF | ON Semicondu... | -- | 1000 | MOSFET N-CH 600V 1.9A DPA... |
FQD20N06LTM | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 17.2A DPA... |
FQD20N06LETM | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 17.2A DPA... |
FQD20N06TF | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 16.8A DPA... |
FQD2P40TF | ON Semicondu... | -- | 1000 | MOSFET P-CH 400V 1.56A DP... |
FQD2N50TM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 500V 1.6A DPA... |
FQD2N50TF | ON Semicondu... | -- | 1000 | MOSFET N-CH 500V 1.6A DPA... |
FQD20N06LTF | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 17.2A DPA... |
FQD2N60TM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 2A DPAKN... |
FQD2N60TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 2A DPAKN... |
FQD24N08TF | ON Semicondu... | -- | 1000 | MOSFET N-CH 80V 19.6A DPA... |
FQD24N08TM | ON Semicondu... | -- | 1000 | MOSFET N-CH 80V 19.6A DPA... |
FQD2N100TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 1000V 1.6A DP... |
FQD2N80TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 800V 1.8A DPA... |
FQD2N90TF | ON Semicondu... | -- | 1000 | MOSFET N-CH 900V 1.7A DPA... |
FQD2N100TM | ON Semicondu... | -- | 15000 | MOSFET N-CH 1000V 1.6A DP... |
FQD20N06TM | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 16.8A DPA... |
FQD2N60CTM | ON Semicondu... | -- | 10000 | MOSFET N-CH 600V 1.9A DPA... |
FQD2N90TM | ON Semicondu... | -- | 5000 | MOSFET N-CH 900V 1.7A DPA... |
FQD2N60CTM-WS | ON Semicondu... | 0.32 $ | 1000 | MOSFET N-CH 600V 1.9AN-Ch... |
FQD2N80TM | ON Semicondu... | -- | 1000 | MOSFET N-CH 800V 1.8A DPA... |
FQD2P40TM | ON Semicondu... | -- | 2500 | MOSFET P-CH 400V 1.56A DP... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...