Allicdata Part #: | FQD24N08TF-ND |
Manufacturer Part#: |
FQD24N08TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 80V 19.6A DPAK |
More Detail: | N-Channel 80V 19.6A (Tc) 2.5W (Ta), 50W (Tc) Surfa... |
DataSheet: | FQD24N08TF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 750pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 9.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 19.6A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FQD24N08TF is a silicon N-Channel MOSFET transistor design, intended for use in high current applications such as power supplies, switching circuits and other power related functions. It is available in a TO-252 package and features a drain source voltage of up to 24V with a low maximum on resistance of just 0.22 Ohms. Commonly used in automotive and mobile applications, the FQD24N08TF is a common MOSFET for many electronics projects.
An individual MOSFET transistor is one of the most important components in many circuit designs, and the FQD24N08TF provides a great option when looking for a reliable and efficient power switching solution. This type of MOSFET is commonly used to control the on and off states of power supply circuits, allowing a circuit or device to be turned on and off quickly, without suffering the loss of power or contact resistance seen in other methods. By using a MOSFET to control a circuit, the circuit can operate much faster and much more efficiently.
The main difference between a MOSFET and other transistor designs is that the MOSFET has a gate terminal, which acts as a control switch, allowing the user to electronically control the on and off states of the transistor. The MOSFET also has a much lower on-resistance than other transistor designs, which makes it much more efficient at transferring power, since it requires less voltage to make the switch from on to off. This makes the FQD24N08TF ideal for power control applications.
The FQD24N08TF has many features that make it an attractive choice for many applications. It is rated for a drainsource breakdown voltage of up to 24V, which is high enough to tackle most power applications. It also has a low maximum on resistance of 0.22 Ohms and a high current drive, meaning that it can handle large amounts of current without suffering too much of a power drop. It also produces a low thermal resistance, meaning that it can handle high power levels without overheating.
When looking at the overall working principle of the FQD24N08TF, it is important to understand how a MOSFET transistor works. The basic idea is that the gate terminal acts as a switch to turn the transistor on and off, with the amount of current from the drain source flow being controlled by the gate charge and the threshold voltage. When the gate terminal gets a positive charge, the FET will conduct current and when it gets a negative charge, it will not conduct.
The FQD24N08TF MOSFET is a great choice for many different applications, from simple power supplies and switching circuits to more advanced projects. It is available in a wide variety of sizes, so it can be used to tackle small and large scale power control tasks. With its high current drive, low on-resistance, and high voltage capacity, the FQD24N08TF is a great choice for any power electronics project.
The specific data is subject to PDF, and the above content is for reference
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