FQD2N60CTF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FQD2N60CTF is a type of single N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is a type of transistor that makes use of an electric field to control the flow of current through a channel between two terminals known as the source and the drain. The gate electrode is used to control the channel between the two terminals, allowing the current to flow through or blocking it.

The FQD2N60CTF is widely used in power applications, and is ideal for use in Current Transfer Elements (CTE), Switched Mode Power Supplies (SMPS), and DC-DC converters. It is also used in voltage and speed controllers, such as half and full bridge converter as well as in Sunbeam LED drivers.

The FQD2N60CTF has a very low on-state drain to source resistance (RDS(on)) of only 9.5 mΩmax and an extremely high power level and breakdown voltage of 17A and 600V respectively. Its drain current capability is also very good and the power dissipation is also quite high. The high speed switching capabilities and low gate driving voltages also makes it an ideal choice for many high frequency applications.

The working principle of the FQD2N60CTF is simple and straightforward. When the gate voltage is increased, the channel resistance between the source - drain terminals reduces and the current starts to flow. A lower gate voltage will result in higher channel resistance and lower current flow. The operation of the device is completely dependent on the electric field applied to the gate terminal, which makes up for the device’s simple yet effective working principle.

The FQD2N60CTF also offers some other benefits, such as reduced heat production, low switching time and improved noise margins. It also has a high level of immunity to electric shocks, making it an ideal choice for use in electric and electronic devices. This type of MOSFET also has a wide range of potential applications in all types of power suppies, from DC to AC.

In conclusion, the FQD2N60CTF is a type of single N-Channel MOSFET that is ideal for use in power applications, Current Transfer Elements (CTE), Switched Mode Power Supplies (SMPS), and DC-DC converters. It has a low on-state resistance, high power level and breakdown voltage, as well as a high immunity to electric shock. The operation of the device is based on the electric field applied to the gate terminal, with the result that the device has a very simple yet effective working principle.

The specific data is subject to PDF, and the above content is for reference