Allicdata Part #: | FQD2N80TM_WS-ND |
Manufacturer Part#: |
FQD2N80TM_WS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 800V 1.8A DPAK |
More Detail: | N-Channel 800V 1.8A (Tc) 2.5W (Ta), 50W (Tc) Surfa... |
DataSheet: | FQD2N80TM_WS Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | QFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 6.3 Ohm @ 900mA, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 550pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 50W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The FQD2N80TM-WS is a high-density, low-threshold,matched transistor set in a TO-218 package. It is made up of two N-channel enhancement type MOSFETs, which are commonly used in medium and high power applications.
The FQD2N80TM-WS has a maximum rated drain current of 7.8 A and a drain source voltage rating of 800 V. It is usually used in industrial applications such as motor drivers, DC motor control, high power lighting systems, battery operated devices, and power electronics. The FQD2N80TM-WS is designed to handle large amounts of power with a very low on resistance, making it an excellent choice for high power applications.
The FQD2N80TM-WS is a two-Stage MOSFET circuit consisting of two N-channel enhancement mode MOSFETs. The two MOSFETs are linked in series, forming a power stage between the source and load. To ensure the best operation of the FQD2N80TM-WS, the driving circuitry should be designed to provide the correct current drive for each of the MOSFETs.
When a voltage is applied across the drain and source of the FQD2N80TM-WS, a supply of electrons flows from the drain to the source, causing an increase in the number of electrons in the gate. This increases the conduction of the MOSFET, allowing current to flow from the drain to the source. The FQD2N80TM-WS will continue to conduct current until the drain source voltage is removed.
The gate voltage (V GS ) of the FQD2N80TM-WS is what determines the conduction level of the MOSFET. A higher V GS will result in a higher conduction level, while a lower V GS will result in a lower conduction level. The V GS should be carefully monitored to ensure the highest level of performance, as it can be the determining factor in how well the FQD2N80TM-WS performs.
The FQD2N80TM-WS is designed to handle large amounts of power, making it an excellent choice for high power applications. Due to its low on resistance and large drain-source voltage, it is a good choice for motor control, DC motor control, high power lighting systems, and power electronics. The FQD2N80TM-WS is a high-quality device that is built to last and can provide reliable operation for many years.
The specific data is subject to PDF, and the above content is for reference
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