FQD2P40TM Discrete Semiconductor Products |
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Allicdata Part #: | FQD2P40TMTR-ND |
Manufacturer Part#: |
FQD2P40TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 400V 1.56A DPAK |
More Detail: | P-Channel 400V 1.56A (Tc) 2.5W (Ta), 38W (Tc) Surf... |
DataSheet: | FQD2P40TM Datasheet/PDF |
Quantity: | 2500 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 38W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 6.5 Ohm @ 780mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.56A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FQD2P40TM is a Field-Effect Transistor (FET) designed for use as an analog power switch. It is an electrically controlled switch that can be used to regulate current flow in many types of high power circuits, including motor control and lighting applications.
The FQD2P40TM is a single device that contains both a p-type and an n-type field-effect transistor (FET). It is commonly used as part of a complementary pair of switches in a circuit, forming the basis of a circuit that can be used to control the power of a device.
The field-effect transistor is an electronic device that is used to control the flow of electrons in a circuit. It is an active device and therefore requires an input voltage to control the current flow. The FET is made up of a gate, drain and source. The FET acts like a valve, which can be opened and closed depending on the voltage applied to the gate.
The FQD2P40TM has two main components. The Gate and the Channel. The gate is the control element of the device and is made up of two layers. The first layer is a semiconductor material such as silicon. This provides the properties of conductivity and resistance. This is followed by a layer of metal which is insulated to protect the gate from damage. The gate is then connected to the source of the circuit.
The channel is the switching element of the FQD2P40TM. It is a piece of semi-conductive material such as an oxide layer, which is used to control the flow of electrons. When a voltage is applied to the gate the charge begins to flow, allowing electrons to pass through the channel. This gives the device its \'on\' and \'off\' capabilities when the voltage is switched.
The FQD2P40TM works on the principle of \'Threshold Voltage\'. This is the voltage that must be applied to the gate in order for the electrons to pass through the channel. This voltage is determined by the type of material used in the device, for example p or n-type FETs.
The FQD2P40TM is used in a wide variety of applications due to its high power capabilities and switching speed. These applications include motor control and lighting, as well as switching off and on various types of power supplies. The device is also used as an analog power switch, controlling variables such as speed and direction of motors, or turning on and off fancy lights.
The FQD2P40TM is an essential device for any designer of power circuits. Its high switching speed and efficiency make it the perfect choice for driving motors and other high power devices. Because it can be used as both an analog and digital power switch, it is the ideal choice for adding something extra to a design.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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FQD2N80TM_WS | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 800V 1.8A DPA... |
FQD2N60CTF_F080 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 1.9A DPA... |
FQD2P40TF_F080 | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 400V 1.56A DP... |
FQD2N40TF | ON Semicondu... | -- | 1000 | MOSFET N-CH 400V 1.4A DPA... |
FQD2N40TM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 400V 1.4A DPA... |
FQD2N30TM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 300V 1.7A DPA... |
FQD2N60CTF | ON Semicondu... | -- | 1000 | MOSFET N-CH 600V 1.9A DPA... |
FQD20N06LTM | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 17.2A DPA... |
FQD20N06LETM | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 17.2A DPA... |
FQD20N06TF | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 16.8A DPA... |
FQD2P40TF | ON Semicondu... | -- | 1000 | MOSFET P-CH 400V 1.56A DP... |
FQD2N50TM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 500V 1.6A DPA... |
FQD2N50TF | ON Semicondu... | -- | 1000 | MOSFET N-CH 500V 1.6A DPA... |
FQD20N06LTF | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 17.2A DPA... |
FQD2N60TM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 2A DPAKN... |
FQD2N60TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 2A DPAKN... |
FQD24N08TF | ON Semicondu... | -- | 1000 | MOSFET N-CH 80V 19.6A DPA... |
FQD24N08TM | ON Semicondu... | -- | 1000 | MOSFET N-CH 80V 19.6A DPA... |
FQD2N100TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 1000V 1.6A DP... |
FQD2N80TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 800V 1.8A DPA... |
FQD2N90TF | ON Semicondu... | -- | 1000 | MOSFET N-CH 900V 1.7A DPA... |
FQD2N100TM | ON Semicondu... | -- | 15000 | MOSFET N-CH 1000V 1.6A DP... |
FQD20N06TM | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 16.8A DPA... |
FQD2N60CTM | ON Semicondu... | -- | 10000 | MOSFET N-CH 600V 1.9A DPA... |
FQD2N90TM | ON Semicondu... | -- | 5000 | MOSFET N-CH 900V 1.7A DPA... |
FQD2N60CTM-WS | ON Semicondu... | 0.32 $ | 1000 | MOSFET N-CH 600V 1.9AN-Ch... |
FQD2N80TM | ON Semicondu... | -- | 1000 | MOSFET N-CH 800V 1.8A DPA... |
FQD2P40TM | ON Semicondu... | -- | 2500 | MOSFET P-CH 400V 1.56A DP... |
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