Allicdata Part #: | FQD20N06TMTR-ND |
Manufacturer Part#: |
FQD20N06TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 16.8A DPAK |
More Detail: | N-Channel 60V 16.8A (Tc) 2.5W (Ta), 38W (Tc) Surfa... |
DataSheet: | FQD20N06TM Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 38W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 590pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 63 mOhm @ 8.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 16.8A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FQD20N06TM is a device belonging to the FET (Field-Effect Transistor) family, and more specifically a Mosfet (Metal Oxide Semiconductor FET). FETs are usually unipolar devices, meaning that they conduct using only one type of charge carrier. FETs are typically composed of two terminals, the source and the drain, with the gate being a third terminal that is used to modulate the flow of current between the source and the drain. The FQD20N06TM is a single Mosfet device, meaning it has just one field-effect terminal.
The FQD20N06TM is used to control current in applications in which very low impedance and high switching speed are required. This device functions in the same way as a switch, allowing electricity to flow through it only when the gate is activated. The FQD20N06TM can be used to control current in applications such as automotive systems, power supplies, motor controllers, and amplifiers.
The FQD20N06TM functions by altering its channel of electrons when a voltage is applied to the gate. Through this, the FQD20N06TM is able to regulate current flow between its source and its drain. As the voltage applied to the gate is increased, the amount of current capable of flowing between the source and the drain increases. When the voltage is removed, no current is able to flow through the FQD20N06TM.
The FQD20N06TM is also designed to provide consistent operation in a wide range of temperatures and operating conditions. Therefore, the FQD20N06TM can be used in a variety of applications and environments, allowing for greater design flexibility. The FQD20N06TM also has low power consumption, making it perfect for use in battery-operated applications, as well as providing reliable operation in high-temperature and high-humidity environments.
The FQD20N06TM is an important component for controlling and regulating current in a wide variety of applications. Its ability to provide consistent operation in a wide range of temperatures and operating conditions allows for greater design flexibility, while its low power consumption makes it the perfect component for battery-operated applications. The FQD20N06TM is capable of handling high voltages, making it an ideal component for use in applications such as motor controls, power supplies, and amplifiers.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FQD2N80TM_WS | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 800V 1.8A DPA... |
FQD2N60CTF_F080 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 1.9A DPA... |
FQD2P40TF_F080 | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 400V 1.56A DP... |
FQD2N40TF | ON Semicondu... | -- | 1000 | MOSFET N-CH 400V 1.4A DPA... |
FQD2N40TM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 400V 1.4A DPA... |
FQD2N30TM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 300V 1.7A DPA... |
FQD2N60CTF | ON Semicondu... | -- | 1000 | MOSFET N-CH 600V 1.9A DPA... |
FQD20N06LTM | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 17.2A DPA... |
FQD20N06LETM | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 17.2A DPA... |
FQD20N06TF | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 16.8A DPA... |
FQD2P40TF | ON Semicondu... | -- | 1000 | MOSFET P-CH 400V 1.56A DP... |
FQD2N50TM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 500V 1.6A DPA... |
FQD2N50TF | ON Semicondu... | -- | 1000 | MOSFET N-CH 500V 1.6A DPA... |
FQD20N06LTF | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 17.2A DPA... |
FQD2N60TM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 2A DPAKN... |
FQD2N60TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 2A DPAKN... |
FQD24N08TF | ON Semicondu... | -- | 1000 | MOSFET N-CH 80V 19.6A DPA... |
FQD24N08TM | ON Semicondu... | -- | 1000 | MOSFET N-CH 80V 19.6A DPA... |
FQD2N100TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 1000V 1.6A DP... |
FQD2N80TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 800V 1.8A DPA... |
FQD2N90TF | ON Semicondu... | -- | 1000 | MOSFET N-CH 900V 1.7A DPA... |
FQD2N100TM | ON Semicondu... | -- | 15000 | MOSFET N-CH 1000V 1.6A DP... |
FQD20N06TM | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 16.8A DPA... |
FQD2N60CTM | ON Semicondu... | -- | 10000 | MOSFET N-CH 600V 1.9A DPA... |
FQD2N90TM | ON Semicondu... | -- | 5000 | MOSFET N-CH 900V 1.7A DPA... |
FQD2N60CTM-WS | ON Semicondu... | 0.32 $ | 1000 | MOSFET N-CH 600V 1.9AN-Ch... |
FQD2N80TM | ON Semicondu... | -- | 1000 | MOSFET N-CH 800V 1.8A DPA... |
FQD2P40TM | ON Semicondu... | -- | 2500 | MOSFET P-CH 400V 1.56A DP... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...