FQD2N90TF Discrete Semiconductor Products

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The FQD2N90TF is a N-channel Power MOSFET device that is most frequently used in applications requiring high power switching. This device is available in a variety of different packages, including the TO-220 and DPAK packages, and is rated for both high current and voltage ratings. The FQD2N90TF has a maximum drain-source voltage rating of 900V, a maximum drain current of 2A, an RDS(on) as low as 0.127Ω, and an operating temperature of up to 150℃.

The FQD2N90TF is a popular choice for power control applications because of its capability to handle high current in a relatively small form factor. It is commonly used in the application of motor control, lighting control, audio power amplifiers, power supplies, and power switching circuits. In addition, this device is also popular for its high-speed switching capability, which allows it to switch power rapidly and accurately in applications such as power supplies and amplifier stages.

The FQD2N90TF works on the principle of MOSFET transistors. This type of transistor is composed of three components; a source, a drain, and a gate. The source is the power input to the device, and the drain is the output from the device. The gate is the control input which is used to control the flow of current between the source and the drain. When a voltage is applied to the gate, the current between the source and the drain can be changed, depending on the magnitude of the voltage applied to the gate.

The FQD2N90TF is designed to allow a low ON resistance, meaning that it can deliver high current with minimal voltage drop. This makes it ideal for applications that require high current with minimal power loss. Additionally, the FQD2N90TF also has a fast switching speed, allowing it to switch current quickly, which is important in applications that require precise timing.

In summary, the FQD2N90TF is an N-Channel Power MOSFET device that is most frequently used in applications requiring high power switching. It is available in different packages and is rated for both high current and voltage ratings, making it an ideal choice for power control applications. The FQD2N90TF is composed of a source, drain, and gate, and works on the principle of MOSFET transistors. In addition, it has a low ON resistance and a fast switching speed which is ideal for applications that require high current and minimal power loss, or require precise timing.

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