Allicdata Part #: | FQD2P40TF_F080-ND |
Manufacturer Part#: |
FQD2P40TF_F080 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 400V 1.56A DPAK |
More Detail: | P-Channel 400V 1.56A (Tc) 2.5W (Ta), 38W (Tc) Surf... |
DataSheet: | FQD2P40TF_F080 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 38W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Series: | QFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 400V |
Current - Continuous Drain (Id) @ 25°C: | 1.56A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 6.5 Ohm @ 780mA, 10V |
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FQD2P40TF_F080 is a transistor belonging to the family of field effect transistors (FETs) and specifically the type of single field-effect transistors (MOSFET), which utilize a gate control to set the conductive channel between source and drain zones of the device. This type of transistor has become increasingly popular in recent years, thanks to its various capabilities and functioning principles.
This particular transistor, FQD2P40TF_F080, offers several advantages that make it ideal for applications in various domains. It has a 40V breakdown voltage with tolerances up to 12V. It also has a low and high side gate drive capability of 2V and 8V, respectively. This makes it suitable for use in signal level switching applications for power control and regulation, as well as for powering two or more devices.
The FQD2P40TF_F080 also has a 4-lane ESD protection pipeline which offers an effective layer of protection from electrostatic discharge. It also offers a low on-state resistance rating of as little as 0.45ohms per lane, making it highly efficient when used for switching applications. The maximum operating temperature for this device is 175°C, which makes it suitable for use in a wide range of environmental conditions and application requirements.
The FQD2P40TF_F080 functions with the help of a gate control. This gate control allows the current to flow through the device, when the correct Gate-Source voltage is applied. The Gate-Source voltage is applied to the transistor, setting the levels in between the source and drain regions of the device. This leads to the production of an electric field between these two regions, which in turn sets up a conductive channel through which the current flows. To stop the current flow, the Gate-Source voltage must be removed; or reduced, to reduce the current flow.
The ability of this device to switch signals quickly and accurately has made it a popular choice for networking, automotive and industrial control applications. It is often used to switch between two or more outlets for power, such as for controlling the output of motor and lighting systems. This device is also often used in electrical and telecommunication networks, for signal switching and regulation. The FQD2P40TF_F080 is also used as a power amplifier in a variety of home audio systems.
The FQD2P40TF_F080 is an effective device, thanks to its gate control principle and excellent performance characteristics. Its various application fields make it suitable for use in a number of contexts. With its low on-state resistance and 4-lane ESD protection pipeline, the FQD2P40TF_F080 is an ideal choice for almost any application that requires high efficiency and reliable signal control.
The specific data is subject to PDF, and the above content is for reference
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