Allicdata Part #: | FQD2N40TF-ND |
Manufacturer Part#: |
FQD2N40TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 400V 1.4A DPAK |
More Detail: | N-Channel 400V 1.4A (Tc) 2.5W (Ta), 25W (Tc) Surfa... |
DataSheet: | FQD2N40TF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 150pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 5.5nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 5.8 Ohm @ 700mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.4A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FQD2N40TF is a n-channel MOSFET, classified as a single device transistor. This type of transistor is capable of acting as a closed or open switch, namely to close or off electric signals in order to provide power or data transmission control.
An FQD2N40TF transistor is a type of power MOSFET, designed for higher current and voltage demanding applications. It has an efficient switching capability for heavy load applications, with a drain-source voltage (VDS) rating of 40 Volts, a drain-source current (IDS) of 2 Amps, and a continuous drain current (ID) of 4 Amps. It also has an RDS(ON) at 10V of 0.0065 Ohms, allowing for a faster switching speed, accommodating the fast switching needs of higher current applications.
The FQD2N40TF works similarly to that of other MOSFET transistors. It consists of four principal parts, the gate, the source, the drain and the body. The gate acts as a control to turn the MOSFET on or off and thus regulate the flow of power or other signals passing through it. The source is the origin point of the current where the electrons come from, while the drain is the point of current flow to, where the electrons go. The body is the substrate upon which the gate, source and drain are metalized for connection.
The basic principle behind how a MOSFET transistor functions relies on the fact that the application of a voltage causes a charge to accumulate in the channel separating the source and drain. This voltage, called the gate voltage, is then used to control the flow of current through the channel. With the channel filled with electrons, the transistor is considered ON and allowing for current to flow; alternatively, with the channel depleted of electrons, the transistor is OFF and prohibiting the current from flowing.
The FQD2N40TF is most suited for circuit switching and protection applications, such as a motor control circuit. Its efficient switching capabilities, low resistance and fast switching speed makes it ideal for regulating electric currents and protecting delicate components against surges. As a standard transistor, the FQD2N40TF is also widely used in many consumer electronics, such as mobile phones and tablets.
In summary, the FQD2N40TF transistor is a n-channel MOSFET able to produce current control through the application of a voltage in its gate. With a drain source voltage of 40 Volts, drain source current of 2 Amps, and a continuous drain current of 4 Amps, the FQD2N40TF is the ideal transistor for applications requiring efficient switching and protection.
The specific data is subject to PDF, and the above content is for reference
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