Allicdata Part #: | FQPF10N20-ND |
Manufacturer Part#: |
FQPF10N20 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 6.8A TO-220F |
More Detail: | N-Channel 200V 6.8A (Tc) 40W (Tc) Through Hole TO-... |
DataSheet: | FQPF10N20 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 670pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 360 mOhm @ 3.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.8A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQPF10N20 is a discrete power MOSFET that offers high performance in a small package. The device is intended for use in applications where efficiency is of particular importance, such as power supplies and load switching. Its ability to rapidly switch large loads with minimal power loss makes it an attractive option for designers looking for the best possible combination of power efficiency and performance.
The FQPF10N20 consists of a n-channel MOSFET formed with a combination of an insulated gate and a substrate. The device offers a gate threshold voltage of 4.5V, maximum drain-source voltage (Vds) of 200V, maximum drain current (Id) of 10A, power dissipation (Pd) of 600mW, and total gate charge (Qg) of 56nC. This makes it an excellent choice for applications requiring high power handling and/or low conduction losses.
The FQPF10N20 is designed for use in a variety of circuits, such as DC-DC converters, motor drives, high-voltage switches and relays, and industrial heating systems. Its main function is to effectively convert the energy stored in the gate to the energy dissipated in the drain-source circuit. The FQPF10N20 operates in three distinct regions: the linear region, the saturation region, and the cutoff region.
In linear (triode) operation, current is controlled by the gate voltage and the drain current is proportional to the gate voltage. When the device is in saturation, the drain current is limited by the on-resistance of the device and is not significantly affected by changes in the gate voltage. Finally, in cutoff operation, no current flows through the device and the gate voltage must be more negative than the threshold voltage for there to be any drain current.
The FQPF10N20 is capable of operating at frequencies in excess of 10MHz and is rated for a temperature range of -55ºC to +175ºC. This makes it well-suited for high-temperature applications, as well as for applications that require high switching speeds, such as radio-frequency (RF) power amplifiers and voltage-controlled oscillators (VCOs).
The FQPF10N20 offers an attractive combination of power efficiency and performance. Its ability to quickly and efficiently switch loads without sacrificing power makes it a great choice for designers looking for the best possible performance in their applications. Its small size, high frequency capability, and wide temperature range make it an ideal choice for many different types of power conversion and switching applications.
The specific data is subject to PDF, and the above content is for reference
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