FQPF9N90C

Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	900V
Current - Continuous Drain (Id) @ 25°C:	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	1.4 Ohm @ 4A, 10V
Vgs(th) (Max) @ Id:	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	58nC @ 10V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	2730pF @ 25V
FET Feature:	--
Power Dissipation (Max):	68W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220F
Package / Case:	TO-220-3 Full Pack
Series:	QFET®
Packaging:	Tube
Part Status:	Obsolete
FET Type:	N-Channel

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The FQPF9N90C is a field effect transistor, more specifically a metal oxide semiconductor field effect transistor (MOSFET). It is a type of transistor referred to as a single FET because it has only one drain, source, and gate. This particular type of MOSFET is part of a class of devices referred to as advanced power, featuring low on-state resistance and high current output capabilities. The FQPF9N90C is designed for high-current switching and motor control applications, and its working principle is based on the fact that current flow is reduced when it encounters resistance.The FQPF9N90C works by using the principles of electrical resistance and the charge carrier concentration. When the gate voltage of the FQPF9N90C is increased, electrons are drawn to the drain-source region, forming what is known as a depletion region. This region reduces the current flow through the device, since the increased concentration of electrons in this region blocks the current path. In contrast, when the gate voltage of the FQPF9N90C is decreased, the depletion region is reduced and the current flow is increased.The FQPF9N90C is ideal for applications such as motor control, DC/DC converters, power management supplies, and power switching. It is designed to operate over a wide power range, from 500V up to 900V, and its low on-state resistance and high-frequency operation make it ideal for high-current switching applications. This transistor is also designed to operate over a wide temperature range, from -55 to 150 degrees Celsius.In motor control applications, the FQPF9N90C can be used to control the speed of the motor. It does this by changing the voltage applied to the gate terminal of the transistor, as this alters the amount of current flowing through the drain and source terminals. When the gate voltage of the FQPF9N90C is increased, the amount of current flowing through the terminals is decreased, thus reducing the speed of the motor. When the gate voltage is decreased, the amount of current flowing is increased, resulting in an increase in motor speed.The FQPF9N90C is also suitable for use in DC/DC converters due to its superior switching capabilities. In these applications, the FQPF9N90C works by changing the output voltage of a DC/DC converter, which is produced when the transistor is switched on and off at the required frequency. When the FQPF9N90C is switched on, its low on-state resistance enables it to draw a considerable current from the source, resulting in an increase in the output voltage. Similarly, when the FQPF9N90C is switched off, its high on-state resistance causes it to draw little current, thus resulting in a decrease in the output voltage.The FQPF9N90C is most commonly used in power switching applications, where it can control the flow of electricity in various electronic systems. In these applications, the FQPF9N90C works by controlling the resistance of the device. When the gate voltage of the FQPF9N90C is increased, the amount of current that is allowed to flow through the device is decreased, resulting in a decrease in power consumption. By contrast, when the gate voltage of the FQPF9N90C is decreased, the amount of current allowed to flow is increased, resulting in an increase in power consumption.The FQPF9N90C is an ideal transistor for a range of high-current switching and motor control applications. Its superior operating characteristics and wide voltage and temperature range make it an excellent choice for projects requiring high-efficiency power management.

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