FQPF16N25C Allicdata Electronics
Allicdata Part #:

FQPF16N25C-ND

Manufacturer Part#:

FQPF16N25C

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 250V 15.6A TO-220F
More Detail: N-Channel 250V 15.6A (Tc) 43W (Tc) Through Hole TO...
DataSheet: FQPF16N25C datasheetFQPF16N25C Datasheet/PDF
Quantity: 395
Stock 395Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 43W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 53.5nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 270 mOhm @ 7.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The FQPF16N25C is a 16A, 25V, N-channel Power Mosfet that features incredibly low on-resistance and low gate charge. This Mosfet is a member of the Fairchild PowerTrench family, which is a line of low-on-resistance mosfets designed to minimize switching losses, offering unparalleled performance in high-efficiency power applications.

The FQPF16N25C lets designers control the current flow through the device with excellent accuracy, enabling them to create systems with high efficiency and accuracy. On top of that, FQPF16N25C incorporates an avalanche- rated die, which makes it highly suitable for applications that require very low gate drive voltages while still providing superior avalanche protection.

Application Field

The FQPF16N25C can be used in a range of applications, including home electronics, gaming consoles, medical equipment, automotive systems, and solar inverters. Its low on-resistance and low gate charge make it ideal for battery operated and low-voltage applications where high efficiency and high accuracy are a priority.

Working Principle

FQPF16N25C is an N-channel power MOSFET that uses the principle of electric fields to control the transfer of electrons through the gate. The electrons flow from the source to the drain when a voltage is applied to the gate. This voltage controls the gate of the transistor, allowing current to flow through the device.

The device has two distinct channels, the source and the drain. Electrons flow from the source to the drain and electron potential increases from the source to drain. This process is called MOSFET conduction. As the voltage applied to the gate increases, the electrons become more mobile and can pass through the channel more easily.

The electric field between the gate and the source-drain channel is called the channel threshold and it determines the minimum gate voltage needed to turn the device on. The ability to control the flow of electrons through the device is what makes the FQPF16N25C so reliable, efficient and accurate.

The FQPF16N25C is a powerful, reliable and efficient mosfet that provides an excellent choice for applications that require high efficiency, high accuracy and low on-resistance. It is a versatile, reliable and well-engineered transistor that can be used in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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