| Allicdata Part #: | FQPF6N80TFS-ND |
| Manufacturer Part#: |
FQPF6N80T |
| Price: | $ 2.20 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 800V 3.3A TO-220F |
| More Detail: | N-Channel 800V 3.3A (Tc) 51W (Tc) Through Hole TO-... |
| DataSheet: | FQPF6N80T Datasheet/PDF |
| Quantity: | 1406 |
| 1 +: | $ 1.99710 |
| 10 +: | $ 1.80558 |
| 100 +: | $ 1.45095 |
| 500 +: | $ 1.12853 |
| 1000 +: | $ 0.93507 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220F |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 51W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1500pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 1.95 Ohm @ 1.65A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3.3A (Tc) |
| Drain to Source Voltage (Vdss): | 800V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The FQPF6N80T is a high-speed, low-power Field-Effect Transistor (FET) used in many modern electronic designs.
A FET is a type of transistor used in electronic applications that uses a single-gate input to control the electrical characteristics of a semiconductor element in order to regulate current flow. FQPF6N80T is a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), a type of FET. The FQPF6N80T is an enhancement-mode transistor, which means that it can only be shut off when the gate is at a negative voltage relative to the source.
The FQPF6N80T is designed to provide a high switching speed with low power consumption; it typically has a drain-source on-resistance (Rds) of around 0.042 Ohms at Vgs=10V. This makes it ideal for any application requiring low power with high speed, such as mobile devices, Power Over Ethernet (PoE) systems, and servers.
The FQPF6N80T works by allowing current to flow between the drain and the source when a gate voltage, Vg, is applied to the gate terminal. This voltage, Vg, is applied to the drain, and then the current flows from the drain to the source. As the voltage at the gate increases, the channel resistance decreases, allowing more current to flow through the source and drain. When the voltage at the gate reaches a certain threshold, the FET is completely on and allows the current to flow freely. Conversely, when the voltage at the gate decreases, the channel resistance increases, limiting the amount of current that can flow.
The FQPF6N80T has many application fields, including automotive, power conversion, and communication systems. In automotive electronics, it can be used as an inverter to control the charging of a car\'s battery, as an engine control unit, or as an air conditioning control unit. In power conversion, it is widely used as a switch, where it can control the flow of power in an AC-DC converter or a DC-DC converter.
The FQPF6N80T is also used in communication systems, where it can act as a switch that can control the transmission of analog and digital signals. This makes the FQPF6N80T ideal for wireless communications, allowing wireless devices to switch between transmitting and receiving signals. It is also used in cellular networks to switch between base stations, allowing a single device to be used for both calling and data transmission.
In conclusion, the FQPF6N80T is an ideal solution for any application needing high speed and low power. It is widely used in automotive, power conversion, and communication systems and can be used to control the flow of current and the transmission of both analog and digital signals. With its convenient usage and attractive cost, the FQPF6N80T has become a valuable tool for today’s electronics engineers.
The specific data is subject to PDF, and the above content is for reference
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FQPF6N80T Datasheet/PDF