FQPF18N20V2YDTU

Series:	QFET®
Packaging:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	200V
Current - Continuous Drain (Id) @ 25°C:	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	140 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	26nC @ 10V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	1080pF @ 25V
FET Feature:	--
Power Dissipation (Max):	40W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220F-3 (Y-Forming)
Package / Case:	TO-220-3 Full Pack, Formed Leads

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FQPF18N20V2YDTU is a N-Channel Field Effect Transistor (FET), which belongs to the class of single transistors. It is an enhancement mode type FET which operates at a voltage range of 20V and a power rating of 18W.

The working principle of the FQPF18N20V2YDTU is based on the Electronic Field Effect. This is a feature where a voltage applied to the gate of a FET (in this device the N-channel) attracts electrons from the source along a sheet of semiconductor material, making it easier for the electrons to move from the source to the drain.The gate is isolated from the rest of the transistor by an insulator which is known as the "gate dielectric." This insulator prevents the electrons from entering the gate.This type of transistor is often used in low level signal applications such as amplifiers, inverters and switches. It is also commonly used in power switching applications, such as in mobile phones, tablets and other consumer electronics. This device has a high voltage rating which makes it suitable for high power applications.Some applications FQPF18N20V2YDTU is used for include:

• Power switching applications
• Low level signal amplifiers and inverters
• High frequency switching applications
• High voltage applications

The FQPF18N20V2YDTU has a number of benefits over other devices in its class. It has a high power rating, an excellent frequency response, a low gate-source capacitance and low on-resistance. Additionally, it has a low static power dissipation which makes it suitable for low power applications.In order to use the FQPF18N20V2YDTU effectively in a circuit, it is important to understand the device’s intended operation and its associated parameters. The typical operation of the FQPF18N20V2YDTU is as follows:

• The drain-source voltage is supplied externally.
• The source is connected internally to the negative voltage supply rail.
• When a voltage is applied to the gate terminal, electrons are attracted from the source to the gate.
• As the gate voltage increases, the current flowing from the drain to the source increases.
• When the gate voltage is above the threshold voltage, the transistor will be saturated.

The FQPF18N20V2YDTU has a number of associated performance parameters which can affect the device’s performance. These include:

• Threshold voltage: This determines the minimum gate voltage needed to cause the transistor to begin conducting.
• Drain-source current: This is the maximum current that can flow between the drain and source.
• Power dissipation: This is the maximum power that the device can handle without suffering damage.
• Transconductance: This is the gain of the device which is determined by the current flowing through the drain and source.
• On-resistance: This is the resistance between the drain and source when the device is saturated.

The FQPF18N20V2YDTU is a versatile device that can be used in a variety of applications. Its high voltage rating and low static power dissipation make it suitable for low power applications, while its high power rating makes it suitable for high power applications. Additionally, its frequency response and gate-source capacitance make it an ideal choice for high frequency applications. With its wide range of features, the FQPF18N20V2YDTU can bring your next project to life.

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