FQPF5P20RDTU

Series:	--
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	200V
Current - Continuous Drain (Id) @ 25°C:	2.15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	1.4 Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id:	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	13nC @ 10V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	430pF @ 25V
FET Feature:	--
Power Dissipation (Max):	38W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220F
Package / Case:	TO-220-3 Full Pack

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Introduction: FQPF5P20RDTU Application Field and Working Principle

The FQPF5P20RDTU is a power MOSFET developed by Fairchild Semiconductor. It is a high-breakdown voltage and small on-resistance device, which mainly used in power system control and high efficient DC-DC converters.

Features of FQPF5P20RDTU

The FQPF5P20RDTU power MOSFET provides a wide range of features for efficient power management. These features include:

• High breakdown voltage level (V_DSS): up to 200 V
• Low on-resistance (R_DS(on)): as low as 0.032Ω at 10 V and 12/14 A
• Low gate threshold voltage: as low as 1.8 V
• Low gate input capacitance (C_iss): 3400 pF
• High switching speed: dV/dt up to 1000 V/μs

These excellent electrical parameters make the FQPF5P20RDTU an ideal choice for a wide range of applications in the power management system.

Application Fields of FQPF5P20RDTU

The FQPF5P20RDTU power MOSFET is mainly used in high efficient DC-DC converters and power system control. It is suitable for applications such as:

• Power factor correction (PFC) converters: PFC converters are becoming increasingly popular in power supply systems. The FQPF5P20RDTU provides high current handling capability and low on-state resistance, which make it well-suited for PFC converters.
• Voltage regulator modules (VRMs): VRMs are used in a variety of power management systems. The FQPF5P20RDTU has very low switching losses, which make it suitable for VRMs.
• DC-DC converters: The FQPF5P20RDTU can be used in DC-DC converters for efficient conversion of input voltage or current. The high speed switching of the device can improve the efficiency and reduce the power losses in DC-DC converters.

Working Principle of FQPF5P20RDTU

The FQPF5P20RDTU is a MOSFET with two main components: a gate and a drain. The gate voltage determines the on-state resistance (R_DS(on)) of the device. When the gate voltage is high enough, current will flow from the drain to the source and the MOSFET is then said to be in the “on” state. When the gate voltage is low, the MOSFET is in the “off” state and no current will flow. The device also has a threshold voltage (V_th) below which the device does not turn on.The FQPF5P20RDTU also has a body diode, which is a structure commonly found in MOSFETs. The body diode can conduct current only in the reverse direction and its function is to provide a path for drain current when the device is in the off state. The diode will be forward biased when the drain voltage is higher than the source voltage and the device is in the off state.In summary, the FQPF5P20RDTU is a power MOSFET with a wide range of features, suitable for a variety of applications in power system control and high efficient DC-DC converters. The device has a gate and a drain, and its on-state resistance is determined by the gate voltage. The FQPF5P20RDTU also has a body diode to provide a path for reverse current flow.

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