FQPF7N65CYDTU Allicdata Electronics

FQPF7N65CYDTU Discrete Semiconductor Products

Allicdata Part #:

FQPF7N65CYDTU-ND

Manufacturer Part#:

FQPF7N65CYDTU

Price: $ 1.81
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 650V 7A TO-220F
More Detail: N-Channel 650V 7A (Tc) 52W (Tc) Through Hole TO-22...
DataSheet: FQPF7N65CYDTU datasheetFQPF7N65CYDTU Datasheet/PDF
Quantity: 800
1 +: $ 1.62540
10 +: $ 1.46979
100 +: $ 1.18100
800 +: $ 0.82934
1600 +: $ 0.76111
Stock 800Can Ship Immediately
$ 1.81
Specifications
Series: QFET®
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1245pF @ 25V
FET Feature: --
Power Dissipation (Max): 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F-3 (Y-Forming)
Package / Case: TO-220-3 Full Pack, Formed Leads
Description

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The FQPF7N65CYDTU is a metal-oxide-semiconductor field-effect transistor (MOSFET). This type of transistor is a two-terminal device that can be used to amplify or switch electrical signals. MOSFETs are often used in place of traditional bipolar transistors due to their higher degree of accuracy and efficiency.

Metal-oxide-semiconductor field-effect transistors use the principle of electrostatic attraction to control the flow of current between two electrodes. The FQPF7N65CYDTU is a single-gate device, meaning it has one gate terminal which is used to control the current. The gate terminal is given an electrical signal, causing the gate voltage to vary and ultimately the current to be controlled. The source and drain terminals are used to carry the current. Current flows from the source to the drain when the voltage is higher than the threshold voltage of the device, allowing current to flow. The voltage at the gate controls the amount of current that will flow, and so it can be used to control electrical devices.

The FQPF7N65CYDTU is typically used in applications where smaller or thinner components are needed due to their low-profile design. The device is also suitable for applications where power consumption is a priority, as the low gate capacitance of the device helps to reduce power consumption. Additionally, the FQPF7N65CYDTU has a high breakdown voltage, making it suitable for use in high-voltage circuits.

The most common application of the FQPF7N65CYDTU is in power switching circuits. The device is used to control larger loads, such as motors or heaters, by providing a safe way to switch the power supply on and off to the load. This can be done by controlling the voltage at the gate terminal to either turn the device on or off. Other applications include using the device as a linear amplifier or oscillator, as well as in digital logic circuits.

In conclusion, the FQPF7N65CYDTU is a metal-oxide-semiconductor field-effect transistor which is often used in applications where smaller components are desired or where power consumption is a priority. The most common applications are power switching circuits, linear amplifiers, and digital logic circuits. Thanks to its high breakdown voltage, the FQPF7N65CYDTU is suitable for use in a variety of high-voltage applications.

The specific data is subject to PDF, and the above content is for reference

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