| Allicdata Part #: | FQPF8N90C-ND |
| Manufacturer Part#: |
FQPF8N90C |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 900V 6.3A TO-220F |
| More Detail: | N-Channel 900V 6.3A (Tc) 60W (Tc) Through Hole TO-... |
| DataSheet: |  FQPF8N90C Datasheet/PDF |
| Quantity: | 346 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220F |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 60W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2080pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 1.9 Ohm @ 3.15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6.3A (Tc) |
| Drain to Source Voltage (Vdss): | 900V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The FQPF8N90C is a single power MOSFET that has a variety of applications and a unique working principle. The FQPF8N90C is part of the Fairchild FQPF family of products and is often referred to as a fast switching MOSFET. This powerful low-Ohmic MOSFET has a built-in protective diode that makes it suitable for a variety of switching and driving applications.
The FQPF8N90C is specifically designed for high-power operations that require fast switching and high efficiency. This MOSFET has excellent resistance to ESD and gate-source voltage, with a nominal gate-source threshold voltage of -2V. It also has a lower ripple current than alternative products, which makes it highly suitable for driving inductive loads.
The FQPF8N90C is suitable for a wide range of applications, including power supply circuits, power control circuits, and motor control circuits. It can also be used in DC-AC inverters, DC-DC converters, power switch circuits, switching power supplies, and high-frequency amplifying circuits. Additionally, the FQPF8N90C can be used as a current-driven switch for various logic applications.
The FQPF8N90C has an efficient working principle that uses the conductive nature of a MOSFET for controlling power. When a positive voltage is applied to the gate, the MOSFET will become conductive and transfer power between the drain and the source. Conversely, when a negative voltage is applied to the gate, the MOSFET will become non-conductive and power will not be transferred. The drain-source voltage and the drain current will also change with the gate voltage, allowing the MOSFET to be used as an amplifying device.
The FQPF8N90C is a robust, low-ohmic, fast-switching power MOSFET that is suitable for a variety of power applications. It has a built-in protective diode and excellent resistance to ESD and gate-source voltage. It is also highly efficient, with a lower ripple current than alternative products. As such, the FQPF8N90C is an ideal choice for driving inductive loads, power supply circuits, power control circuits, and motor control circuits.
The specific data is subject to PDF, and the above content is for reference
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