| Allicdata Part #: | FQPF13N50CT-ND |
| Manufacturer Part#: |
FQPF13N50CT |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 500V 13A TO-220F |
| More Detail: | N-Channel 500V 13A (Tc) 48W (Tc) Through Hole TO-2... |
| DataSheet: |  FQPF13N50CT Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | QFET® |
| Packaging: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 500V |
| Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 480 mOhm @ 6.5A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2055pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 48W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220F |
| Package / Case: | TO-220-3 Full Pack |
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The FQPF13N50CT is a N-Channel MOSFET transistor from Fairchild Semiconductors. This transistor is specifically designed for applications in switching, power regulators, amplifier and motor controls, as well as many other uses for high voltage and high current applications. With its low on-resistance feature and high voltage capability, it is perfect for high-power switching applications that range from 0.4V to 500V.
The FQPF13N50CT is a high-voltage MOSFET transistor that operates from -55°C to 175°C. It offers a low on-resistance of 16 mOhms and a high voltage capability up to 500V. It has a drain-source breakdown voltage of 510V and a drain current rating of 13A. It also has a forward transfer admittance of 0.48 MS and a gate-source threshold voltage of 3.2V.
The working principle of the FQPF13N50CT is based on the flow of electrons on a metal-oxide semiconductor. It is composed of a source terminal and a drain terminal, with a metal gate in between. When a voltage is applied to the gate, an electric field is created, which controls the flow of electrons between the source and the drain. The voltage on the gate determines the amount of current that flows between the source and drain, allowing for the control of the transistor\'s output.
The FQPF13N50CT transistor is mainly used in high current and high voltage applications such as switch mode power supplies, motor controls, and amplifier circuits. It can also be used in power-saving systems and wireless applications. Its low on-resistance makes it suitable for high power switching applications.
In conclusion, the FQPF13N50CT transistor is a high-voltage MOSFET which offers a low on-resistance of 16 mOhms and a high voltage capability up to 500V. Its working principle is based on the flow of electrons on a metal-oxide semiconductor, allowing it to be used for high-current and high voltage applications. Its low on-resistance and high voltage capabilities also make it suitable for high power switching applications.
The specific data is subject to PDF, and the above content is for reference
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