FQPF10N60CT

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FQPF10N60CT is a Choice of low RDS(on) N-channel MOSFETs, which is suit for high efficiency power supply where low power losses are important for lower component cooling requirement. It has small and lightweight package, which can easy to mount on the pcb. It is also suitable for audio power amplifier, LCD power supply and so on.

The FQPF10N60CT MOSFET is a very standard N-channel type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is composed of a semiconductor channel through which the current passes from the source to the drain when in the ‘on’ state and acts as a switch.

The MOSFET is said to be depletion mode because there is only one type of carrier in the transistor. That is a majority of holes, which is the source of the negative electrical charge.

The working principle of FQPF10N60CT MOSFET is based on a phenomenon called the ‘MOS capacitor’. This capacitor, which is made up of two metal oxide layers, is between the gate and source of the transistor. Since the metal oxide layers have a negative electrical charge, the capacitor stores an electrical charge.

When the gate voltage increases, the amount of negative electrical charge on the MOS capacitor increases. This causes an electric field in the semiconductor channel between the source and drain, which breaks the depletion-mode MOSFET on (current starts to flow through the transistor).

The resistance between the source and drain terminals (RDS(on)) of this type of FQPF10N60CT MOSFET is very low, meaning it has a low RDS(on). This makes it suitable for switch-mode applications and where low power losses are important.

In conclusion, FQPF10N60CT MOSFET is a depletion-mode N-channel MOSFET, which is a great choice for high efficiency power supply and audio power amplifier, LCD power supply and so on. It is widely used in many circuit applications.

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